SSF20N60S Todos los transistores

 

SSF20N60S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSF20N60S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 370 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm

Encapsulados: TO220F

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SSF20N60S datasheet

 ..1. Size:1827K  cn super semi
ssf20n60s ssp20n60s ssb20n60s.pdf pdf_icon

SSF20N60S

SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 600V Super Junction Power Transistor SS*20N60S Rev. 1.2 May. 2018 www.supersemi.com.cn September, 2013 SJ-FET SSF20N60S/SSP20N60S/SSB20N60S 600V N-Channel MOSFET Description Features SJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET is

 6.1. Size:463K  silikron
ssf20n60h.pdf pdf_icon

SSF20N60S

SSF20N60H Main Product Characteristics VDSS 600V RDS(on) 0.2ohm(typ.) ID 20A Marking a nd p in TO247 Sche ma ti c di agr a m Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF20N60H series MOSFETs is a new technology w

 8.1. Size:376K  silikron
ssf20ns65.pdf pdf_icon

SSF20N60S

SSF20NS65 Main Product Characteristics VDSS 680V RDS(on) 180mohm(typ.) ID 20A Marking and pin TO220 Schematic diagram Assignment Features and Benefits Feathers High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF20NS65 series MOSFETs is a new technology. whic

 8.2. Size:463K  silikron
ssf20n50uh.pdf pdf_icon

SSF20N60S

SSF20N50UH Main Product Characteristics VDSS 500V RDS(on) 0.2 (typ.) ID 20A Marking and Pi n TO-247 Schematic Diagram Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery Descri

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