SSF20N60S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSF20N60S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 35 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 20 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 30 nC
Tiempo de subida (tr): 11 nS
Conductancia de drenaje-sustrato (Cd): 370 pF
Resistencia entre drenaje y fuente RDS(on): 0.19 Ohm
Paquete / Cubierta: TO220F
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SSF20N60S Datasheet (PDF)
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ssf20ns60f.pdf
SSF20NS60F Main Product Characteristics: VDSS 600V RDS(on) 170m(typ.) ID 20A Marking a nd p in Sche ma ti c di agr a m TO220F Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF20NS60F series MOSFETs is a new
ssf20ns65f.pdf
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ssf20ns60.pdf
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