SSF20N60S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SSF20N60S
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 35 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4.5 V
Максимально допустимый постоянный ток стока |Id|: 20 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 30 nC
Время нарастания (tr): 11 ns
Выходная емкость (Cd): 370 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.19 Ohm
Тип корпуса: TO220F
SSF20N60S Datasheet (PDF)
ssf20n60s ssp20n60s ssb20n60s.pdf
SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 600V Super Junction Power Transistor SS*20N60S Rev. 1.2 May. 2018 www.supersemi.com.cn September, 2013 SJ-FET SSF20N60S/SSP20N60S/SSB20N60S 600V N-Channel MOSFET Description Features SJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET is
ssf20n60h.pdf
SSF20N60H Main Product Characteristics: VDSS 600V RDS(on) 0.2ohm(typ.) ID 20A Marking a nd p in TO247 Sche ma ti c di agr a m Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF20N60H series MOSFETs is a new technologyw
ssf20ns65.pdf
SSF20NS65Main Product Characteristics: VDSS 680V RDS(on) 180mohm(typ.) ID 20AMarking and pin TO220Schematic diagramAssignmentFeatures and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF20NS65 series MOSFETs is a new technology. whic
ssf20n50uh.pdf
SSF20N50UH Main Product Characteristics VDSS 500V RDS(on) 0.2 (typ.) ID 20A Marking and Pi n TO-247 Schematic Diagram Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery Descri
ssf20ns60f.pdf
SSF20NS60F Main Product Characteristics: VDSS 600V RDS(on) 170m(typ.) ID 20A Marking a nd p in Sche ma ti c di agr a m TO220F Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF20NS60F series MOSFETs is a new
ssf20ns65f.pdf
SSF20NS65FMain Product Characteristics: VDSS 680V RDS(on) 180mohm(typ.) ID 20AMarking and pin TO220FSchematic diagramAssignmentFeatures and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF20NS65F series MOSFETs is a new technology. w
ssf20ns60.pdf
SSF20NS60 Main Product Characteristics: VDSS 600V RDS(on) 170m(typ.) ID 20A Marking a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF20NS60 series MOSFETs is a new te
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