STB458D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STB458D
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 15.6 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 30 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 25 nC
Tiempo de subida (tr): 30 nS
Conductancia de drenaje-sustrato (Cd): 250 pF
Resistencia entre drenaje y fuente RDS(on): 0.0105 Ohm
Paquete / Cubierta: TO263-5L
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STB458D Datasheet (PDF)
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