STB458D Datasheet and Replacement

GreenProductSTB458DaS mHop Microelectronics C orp.Ver 1.0Dual Enhancement Mode Field Effect Transistor (N and P Channel)PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID10.5 @ VGS=10V 17 @ VGS=-10V40V 30A -40V -24A14 @ VGS=4.5V 24 @ VGS=-4.5VD1 D2D1/D2G 1G 2S1G1D1/D2S2G2S 1 N-ch S 2 P-chSTB S

STB45NF06STP45NF06N-channel 60 V, 0.023 , 38 A TO-220, D2PAKSTripFETTM II Power MOSFETFeaturesType VDSS RDS(on) IDSTP45NF06 60 V

STB45N65M5, STF45N65M5, STP45N65M5N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP and TO-220 packagesDatasheet - production dataFeaturesTAB2 Order codes VDSS @ TJmax RDS(on) max ID31STB45N65M532D2PAK1STF45N65M5 710 V 0.078 35 ATO-220FPSTP45N65M5TAB Worldwide best RDS(on) * area Higher VDSS rating and high dv/dt capa

STB45NF06N-CHANNEL 60V - 0.022 - 38A D2PAKSTripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTB45NF06 60V

STB45N65M5, STF45N65M5, STP45N65M5 STW45N65M5N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packagesDatasheet production dataFeatures TAB2VDSS @ RDS(on) 3Order code ID1TJmax max32D2PAK1STB45N65M5TO-220FPTABSTF45N65M5710 V

STP45NF3LL - STP45NF3LLFPSTB45NF3LLN-channel 30V - 0.014 - 45A TO-220 - TO-220FP - D2PAKSTripFET II power MOSFETGeneral featuresType VDSS RDS(on) ID33STB45NF3LL 30V

STB45N30M5DatasheetN-channel 300 V, 53 A, 0.037 typ., MDmesh M5 Power MOSFET in a D2PAK packageFeaturesTABVDS RDS(on) max. IDOrder codeSTB45N30M5 300 V 0.040 53 A23 Extremely low RDS(on)1 Low gate charge and input capacitance Excellent switching performanceDPAK 100% avalanche testedD(2, TAB)Applications Switching applicationsG(1

GreenProductSTB/P454aS mHop Microelectronics C orp.Ver 1.1N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for extremely low RDS(ON).RDS(ON) (m) MaxVDSS IDHigh power and current handling capability.4.8 @ VGS=10VTO-220 & TO-263 package.40V 80A7.2 @ VGS=4.5V DGSTB SERIESSTP SERIESTO-263(DD

isc N-Channel MOSFET Transistor STB45N65M5FEATURESDrain Current : I = 35A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 78m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.