STB458D PDF and Equivalents Search

Green Product STB458D a S mHop Microelectronics C orp. Ver 1.0 Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel) RDS(ON) (m ) Max RDS(ON) (m ) Max VDSS ID VDSS ID 10.5 @ VGS=10V 17 @ VGS=-10V 40V 30A -40V -24A 14 @ VGS=4.5V 24 @ VGS=-4.5V D1 D2 D1/D2 G 1 G 2 S1 G1 D1/D2 S2 G2 S 1 N-ch S 2 P-ch STB S... See More ⇒

STB45NF06 STP45NF06 N-channel 60 V, 0.023 , 38 A TO-220, D2PAK STripFETTM II Power MOSFET Features Type VDSS RDS(on) ID STP45NF06 60 V ... See More ⇒

STB45N65M5, STF45N65M5, STP45N65M5 N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP and TO-220 packages Datasheet - production data Features TAB 2 Order codes VDSS @ TJmax RDS(on) max ID 3 1 STB45N65M5 3 2 D2PAK 1 STF45N65M5 710 V 0.078 35 A TO-220FP STP45N65M5 TAB Worldwide best RDS(on) * area Higher VDSS rating and high dv/dt capa... See More ⇒

STB45NF06 N-CHANNEL 60V - 0.022 - 38A D2PAK STripFET POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STB45NF06 60V ... See More ⇒

STB45N65M5, STF45N65M5, STP45N65M5 STW45N65M5 N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet production data Features TAB 2 VDSS @ RDS(on) 3 Order code ID 1 TJmax max 3 2 D2PAK 1 STB45N65M5 TO-220FP TAB STF45N65M5 710 V ... See More ⇒

STP45NF3LL - STP45NF3LLFP STB45NF3LL N-channel 30V - 0.014 - 45A TO-220 - TO-220FP - D2PAK STripFET II power MOSFET General features Type VDSS RDS(on) ID 3 3 STB45NF3LL 30V ... See More ⇒

STB45N30M5 Datasheet N-channel 300 V, 53 A, 0.037 typ., MDmesh M5 Power MOSFET in a D2PAK package Features TAB VDS RDS(on) max. ID Order code STB45N30M5 300 V 0.040 53 A 2 3 Extremely low RDS(on) 1 Low gate charge and input capacitance Excellent switching performance D PAK 100% avalanche tested D(2, TAB) Applications Switching applications G(1... See More ⇒

Green Product STB/P454 a S mHop Microelectronics C orp. Ver 1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for extremely low RDS(ON). RDS(ON) (m ) Max VDSS ID High power and current handling capability. 4.8 @ VGS=10V TO-220 & TO-263 package. 40V 80A 7.2 @ VGS=4.5V D G STB SERIES STP SERIES TO-263(DD... See More ⇒

isc N-Channel MOSFET Transistor STB45N65M5 FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 78m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ... See More ⇒