SSP65R140SFD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSP65R140SFD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 165 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 26 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 24 nS
Cossⓘ - Capacitancia de salida: 85 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
Paquete / Cubierta: TO220
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SSP65R140SFD Datasheet (PDF)
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SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor650V Super Junction Power MOSFET Gen-SS*65R190S2ERev. 1.0Oct. 2022www.supersemi.com.cnSSF65R190S2E/SSP65R190S2E650V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an adva
Otros transistores... SSP60R360S2E , SSP65R065SFD3 , SSP65R075SFD2 , SSP65R080SFD3 , SSP65R090S2 , SSP65R099S2E , SSP65R099SFD , SSP65R130S2 , IRFB31N20D , SSP65R190S , SSP65R190S2E , SSP65R190S2R , SSP65R190S3 , SSP65R190SFD , SSP65R1K2S2E , SSP65R260S2E , SSP65R260S2R .
History: NTTFS002N04C | WNMD3014
History: NTTFS002N04C | WNMD3014



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