SSP65R140SFD. Аналоги и основные параметры
Наименование производителя: SSP65R140SFD
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 165 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 26 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 24 ns
Cossⓘ - Выходная емкость: 85 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.13 Ohm
Тип корпуса: TO220
Аналог (замена) для SSP65R140SFD
- подборⓘ MOSFET транзистора по параметрам
SSP65R140SFD даташит
ssf65r140sfd ssp65r140sfd.pdf
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ssf65r190s2e ssp65r190s2e.pdf
SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 650V Super Junction Power MOSFET Gen- SS*65R190S2E Rev. 1.0 Oct. 2022 www.supersemi.com.cn SSF65R190S2E/SSP65R190S2E 650V N-Channel Super-Junction MOSFET Gen- Description Features SJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET is utilizing an adva
Другие MOSFET... SSP60R360S2E , SSP65R065SFD3 , SSP65R075SFD2 , SSP65R080SFD3 , SSP65R090S2 , SSP65R099S2E , SSP65R099SFD , SSP65R130S2 , IRF2807 , SSP65R190S , SSP65R190S2E , SSP65R190S2R , SSP65R190S3 , SSP65R190SFD , SSP65R1K2S2E , SSP65R260S2E , SSP65R260S2R .
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