SST60R360S2E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SST60R360S2E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 86 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 12 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 15.5 nC
Tiempo de subida (tr): 7 nS
Conductancia de drenaje-sustrato (Cd): 33 pF
Resistencia entre drenaje y fuente RDS(on): 0.38 Ohm
Paquete / Cubierta: TO252
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SST60R360S2E Datasheet (PDF)
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SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen-SST60R280S2Rev. 1.4Sep. 2022www.supersemi.com.cnSST60R280S2600V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advanced charge bal
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