SST60R360S2E MOSFET. Datasheet pdf. Equivalent
Type Designator: SST60R360S2E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 86 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 15.5 nC
trⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 33 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: TO252
SST60R360S2E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SST60R360S2E Datasheet (PDF)
ssf60r360s2e ssp60r360s2e sst60r360s2e.pdf
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sst60r280s2e.pdf
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SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen- With Fast-Recovery SS*60R280SFDRev. 1.2Feb. 2023www.supersemi.com.cnSSF60R280SFD/SSP60R280SFD/SST60R280SFD600V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryFeaturesDescription Multi-Epi process SJ-FETSJ-FET is new generation o
sst60r280s2.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen-SST60R280S2Rev. 1.4Sep. 2022www.supersemi.com.cnSST60R280S2600V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advanced charge bal
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
