SWB062R08E8T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SWB062R08E8T
   Código: SW062R08E8T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 201.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 125 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 137 nC
   trⓘ - Tiempo de subida: 76 nS
   Cossⓘ - Capacitancia de salida: 424 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0071 Ohm
   Paquete / Cubierta: TO263

Búsqueda de reemplazo de MOSFET SWB062R08E8T

SWB062R08E8T Datasheet (PDF)

..1. Size:804K samwin
swp062r08e8t swb062r08e8t.pdf

SW062R08E8TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 80V High ruggednessID : 125A Low RDS(ON) (Typ 5.9m)@VGS=10VRDS(ON) : 5.9m Low Gate Charge (Typ 137nC) Improved dv/dt Capability 2 100% Avalanche Tested1 12 2 Application:Synchronous Rectification,3 31Li Battery Protect Board, Inverter1. Gate 2.Drain 3

7.1. Size:772K samwin
swp062r68e7t swb062r68e7t.pdf

SW062R68E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 68V High ruggednessID : 100A Low RDS(ON) (Typ 6.2m)@VGS=10V Low Gate Charge (Typ 85nC)RDS(ON) :6.2m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.S

7.2. Size:772K cn super semi
swp062r68e7t swb062r68e7t.pdf

9.1. Size:775K samwin
swp068r68e7t swb068r68e7t.pdf

SW068R68E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 68V High ruggednessID : 90A Low RDS(ON) (Typ 6.8m)@VGS=10V Low Gate Charge (Typ 78nC)RDS(ON) :6.8m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.So

9.2. Size:768K samwin
swp065r68e7t swb065r68e7t.pdf

SW065R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS : 68V High ruggedness Low RDS(ON) (Typ 6.3m)@VGS=10V ID : 100A Low Gate Charge (Typ 75nC) RDS(ON) : 6.3m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application:Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1

9.3. Size:813K samwin
swp060r65e7t swb060r65e7t.pdf

SW060R65E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 65V High ruggedness Low RDS(ON) (Typ 5.6m)@VGS=10V ID : 110A Low Gate Charge (Typ 94nC)RDS(ON) : 5.6m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.S

9.4. Size:816K samwin
swp060r68e7t swb060r68e7t.pdf

SW060R68E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 68V High ruggedness Low RDS(ON) (Typ 5.6m)@VGS=10V ID : 110A Low Gate Charge (Typ 94nC)RDS(ON) : 5.6m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.S

9.5. Size:853K samwin
swp068r08et swb068r08et.pdf

SW068R08ETN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesBVDSS : 80VTO-220TO-263 High ruggedness ID : 120A Low RDS(ON) (Typ 7.1m)@VGS=10VRDS(ON) : 7.1m Low Gate Charge (Typ 59nC) Improved dv/dt Capability 21 100% Avalanche Tested1223 Application: Synchronous Rectification, 13Li Battery Protect Board, Inverter1. Gate 2. Drain

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