SWB072R08ET Todos los transistores

 

SWB072R08ET MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SWB072R08ET

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 174.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 90 nS

Cossⓘ - Capacitancia de salida: 378 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0083 Ohm

Encapsulados: TO263

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SWB072R08ET datasheet

 ..1. Size:1029K  samwin
swb072r08et swp072r08et.pdf pdf_icon

SWB072R08ET

SW072R08ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS 80V High ruggedness ID 100A Low RDS(ON) (Typ 6.6m )@VGS=10V RDS(ON) 6.6m Low Gate Charge (Typ 60nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Inverter, Li Battery Protect Board 1 1. Gate 2. Drain 3. So

 6.1. Size:685K  samwin
swb072r06et swp072r06et.pdf pdf_icon

SWB072R08ET

SW072R06ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS 60V High ruggedness ID 75A Low RDS(ON) (Typ 6.8m )@VGS=10V Low Gate Charge (Typ 84nC) RDS(ON) 6.8m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter

 9.1. Size:751K  samwin
swp076r68e7t swb076r68e7t.pdf pdf_icon

SWB072R08ET

SW076R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 68V High ruggedness ID 85A Low RDS(ON) (Typ 7.6m )@VGS=10V Low Gate Charge (Typ 70nC) RDS(ON) 7.6m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.S

 9.2. Size:766K  samwin
swb075r06et swp075r06et.pdf pdf_icon

SWB072R08ET

SW075R06ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS 60V High ruggedness ID 100A Low RDS(ON) (Typ 7.5m )@VGS=10V Low Gate Charge (Typ 78nC) RDS(ON) 7.5m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter

Otros transistores... SWB060R65E7T , SWB060R68E7T , SWB062R08E8T , SWB062R68E7T , SWB065R68E7T , SWB068R08ET , SWB068R68E7T , SWB072R06ET , MMIS60R580P , SWB075R08E7T , SWB076R68E7T , SWB078R08ET , SWB085R68E7T , SWB086R68E7T , SWB088R06VT , SWB088R08E8T , SWB090R08ET .

History: SWD340R10VT | BM3416E | 2SK1297 | 4N60KL-TF3T-T | 2SK1202 | SWB065R68E7T | 2SK1278

 

 

 

 

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