All MOSFET. SWB072R08ET Datasheet

 

SWB072R08ET Datasheet and Replacement


   Type Designator: SWB072R08ET
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 174.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 378 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0083 Ohm
   Package: TO263
 

 SWB072R08ET substitution

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SWB072R08ET Datasheet (PDF)

 ..1. Size:1029K  samwin
 swb072r08et swp072r08et.pdf pdf_icon

SWB072R08ET

SW072R08ETN-channel Enhanced mode TO-263/TO-220 MOSFETFeaturesTO-263 TO-220 BVDSS : 80V High ruggednessID : 100A Low RDS(ON) (Typ 6.6m)@VGS=10VRDS(ON) : 6.6m Low Gate Charge (Typ 60nC) Improved dv/dt Capability 100% Avalanche Tested 21 1 Application:Synchronous Rectification, 2 23 3Inverter, Li Battery Protect Board11. Gate 2. Drain 3. So

 6.1. Size:685K  samwin
 swb072r06et swp072r06et.pdf pdf_icon

SWB072R08ET

SW072R06ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS : 60V High ruggedness ID : 75A Low RDS(ON) (Typ 6.8m)@VGS=10V Low Gate Charge (Typ 84nC) RDS(ON) : 6.8m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application:Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter

 9.1. Size:751K  samwin
 swp076r68e7t swb076r68e7t.pdf pdf_icon

SWB072R08ET

SW076R68E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 68V High ruggednessID : 85A Low RDS(ON) (Typ 7.6m)@VGS=10V Low Gate Charge (Typ 70nC)RDS(ON) : 7.6m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.S

 9.2. Size:766K  samwin
 swb075r06et swp075r06et.pdf pdf_icon

SWB072R08ET

SW075R06ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS : 60V High ruggedness ID : 100A Low RDS(ON) (Typ 7.5m)@VGS=10V Low Gate Charge (Typ 78nC) RDS(ON) : 7.5m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application:Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter

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Datasheet: SWB060R65E7T , SWB060R68E7T , SWB062R08E8T , SWB062R68E7T , SWB065R68E7T , SWB068R08ET , SWB068R68E7T , SWB072R06ET , 2N7002 , SWB075R08E7T , SWB076R68E7T , SWB078R08ET , SWB085R68E7T , SWB086R68E7T , SWB088R06VT , SWB088R08E8T , SWB090R08ET .

History: 4N80G-TND-R | GSM4925WS | CJ3406 | UPA2727T1A | DH009N02P | FS10UM-9 | PSMN1R5-30BLE

Keywords - SWB072R08ET MOSFET datasheet

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