SWB072R08ET PDF and Equivalents Search

 

SWB072R08ET Specs and Replacement

Type Designator: SWB072R08ET

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 174.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

Cossⓘ - Output Capacitance: 378 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0083 Ohm

Package: TO263

SWB072R08ET substitution

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SWB072R08ET datasheet

 ..1. Size:1029K  samwin
 swb072r08et swp072r08et.pdf pdf_icon

SWB072R08ET

SW072R08ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS 80V High ruggedness ID 100A Low RDS(ON) (Typ 6.6m )@VGS=10V RDS(ON) 6.6m Low Gate Charge (Typ 60nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Inverter, Li Battery Protect Board 1 1. Gate 2. Drain 3. So... See More ⇒

 6.1. Size:685K  samwin
 swb072r06et swp072r06et.pdf pdf_icon

SWB072R08ET

SW072R06ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS 60V High ruggedness ID 75A Low RDS(ON) (Typ 6.8m )@VGS=10V Low Gate Charge (Typ 84nC) RDS(ON) 6.8m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter ... See More ⇒

 9.1. Size:751K  samwin
 swp076r68e7t swb076r68e7t.pdf pdf_icon

SWB072R08ET

SW076R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 68V High ruggedness ID 85A Low RDS(ON) (Typ 7.6m )@VGS=10V Low Gate Charge (Typ 70nC) RDS(ON) 7.6m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.S... See More ⇒

 9.2. Size:766K  samwin
 swb075r06et swp075r06et.pdf pdf_icon

SWB072R08ET

SW075R06ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS 60V High ruggedness ID 100A Low RDS(ON) (Typ 7.5m )@VGS=10V Low Gate Charge (Typ 78nC) RDS(ON) 7.5m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter... See More ⇒

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Detailed specifications: SWB060R65E7T, SWB060R68E7T, SWB062R08E8T, SWB062R68E7T, SWB065R68E7T, SWB068R08ET, SWB068R68E7T, SWB072R06ET, MMIS60R580P, SWB075R08E7T, SWB076R68E7T, SWB078R08ET, SWB085R68E7T, SWB086R68E7T, SWB088R06VT, SWB088R08E8T, SWB090R08ET

Keywords - SWB072R08ET MOSFET specs

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