SWB088R06VT MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SWB088R06VT datasheet

..1. Size:688K samwin
swp088r06vt swb088r06vt.pdf pdf_icon

SW088R06VT N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 60V High ruggedness ID 100A Low RDS(ON) (Typ 10m )@VGS=4.5V (Typ 8.2m )@VGS=10V RDS(ON) 10m @VGS=4.5V Low Gate Charge (Typ 48nC) 8.2m @VGS=10V Improved dv/dt Capability 100% Avalanche Tested 1 1 2 2 2 3 3 Application Electronic Ballast, Motor Control Sync

6.1. Size:742K samwin
swp088r08e8t swb088r08e8t.pdf pdf_icon

SW088R08E8T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 80V High ruggedness ID 80A Low RDS(ON) (Typ 9.4m )@VGS=10V RDS(ON) 9.4m Low Gate Charge (Typ 89nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application Synchronous Rectification, 3 3 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3.S

9.1. Size:755K samwin
swb085r68e7t swp085r68e7t.pdf pdf_icon

SW085R68E7T N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS 68V High ruggedness ID 75A Low RDS(ON) (Typ 9.5m )@VGS=10V RDS(ON) 9.5m Low Gate Charge (Typ 47nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application Synchronous Rectification, 3 3 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3.S

9.2. Size:831K samwin
swp086r68e7t swb086r68e7t.pdf pdf_icon

SW086R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 68V High ruggedness ID 75A Low RDS(ON) (Typ 9.2m )@VGS=10V Low Gate Charge (Typ 64nC) RDS(ON) 9.2m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.So

Otros transistores... SWB068R68E7T , SWB072R06ET , SWB072R08ET , SWB075R08E7T , SWB076R68E7T , SWB078R08ET , SWB085R68E7T , SWB086R68E7T , IRF730 , SWB088R08E8T , SWB090R08ET , SWB10N65K2 , SWB13N65K2 , SWB16N70K , SWB640D , SWB7N65DW , SWC1N60 .