SWD068R08E8T Todos los transistores

 ..1. Size:697K  samwin
 swd068r08e8t.pdf

SW068R08E8T N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS 80V High ruggedness ID 100A Low RDS(ON) (Typ 6.7m )@VGS=10V RDS(ON) 6.7m Low Gate Charge (Typ 128nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application Synchronous Rectification, 3 1 Li Battery Protect Board, Motor Drivers 1. Gate 2.Drain 3.Source 3 Genera

 7.1. Size:710K  samwin
 swd068r68e7t.pdf

SW068R68E7T N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS 68V High ruggedness ID 90A Low RDS(ON) (Typ 7.1m )@VGS=10V RDS(ON) 7.1m Low Gate Charge (Typ 87nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application Synchronous Rectification, 3 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3.Source General Descr

 9.1. Size:727K  samwin
 swd065r03vlt.pdf

SW065R03VLT N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS 30V High ruggedness ID 70A Low RDS(ON) (Typ 6.6m )@VGS=10V Low Gate Charge (Typ 33nC) RDS(ON) 6.6m Improved dv/dt Capability 100% Avalanche Tested 2 1 Application Synchronous Rectification, 2 3 Li Battery Protect Board, Motor Drives 1 1. Gate 2.Drain 3.Source 3 Genera

 9.2. Size:683K  samwin
 swd065r68e7t.pdf

SW065R68E7T N-channel Enhanced mode TO-252 MOSFET TO-252 Features BVDSS 68V High ruggedness ID 90A Low RDS(ON) (Typ 6.3m )@VGS=10V RDS(ON) 6.3m Low Gate Charge (Typ 75nC) Improved dv/dt Capability 1 2 2 100% Avalanche Tested 3 Application Synchronous Rectification, 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3.Sourc

 9.3. Size:753K  samwin
 swi069r10vs swd069r10vs.pdf

SW069R10VS N-channel Enhanced mode TO-251/TO-252 MOSFET Features TO-251 TO-252 BVDSS 100V High ruggedness Low RDS(ON) (Typ 9.0m )@VGS=4.5V ID 70A Low RDS(ON) (Typ 7.1m )@VGS=10V RDS(ON) 9.0m @VGS=4.5V Low Gate Charge (Typ 45nC) Improved dv/dt Capability 7.1m @VGS=10V 100% Avalanche Tested 1 1 2 2 3 3 Application Li Battery Protect Board,

 9.4. Size:784K  samwin
 swha069r10vs swi069r10vs swd069r10vs swp069r10vs swu069r10vs.pdf

SW069R10VS N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220/TO-262 MOSFET Features TO-252 TO-220 TO-262 DFN5*6 TO-251 BVDSS 100V High ruggedness Low RDS(ON) (Typ 9.0m )@VGS=4.5V ID 70A 1 8 Low RDS(ON) (Typ 7.1m )@VGS=10V 2 7 6 3 RDS(ON) 9.0m @VGS=4.5V Low Gate Charge (Typ 45nC) 4 5 Improved dv/dt Capability 7.1m @VGS=10V

 9.5. Size:702K  samwin
 swd062r08e8t.pdf

SW062R08E8T N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS 80V High ruggedness ID 110A Low RDS(ON) (Typ 6.0m )@VGS=10V RDS(ON) 6.0m Low Gate Charge (Typ 141nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application Synchronous Rectification, 3 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3.Source General Des

 9.6. Size:722K  samwin
 swd062r68e7t.pdf

SW062R68E7T N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS 68V High ruggedness ID 100A Low RDS(ON) (Typ 6.5m )@VGS=10V RDS(ON) 6.5m Low Gate Charge (Typ 102nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application Synchronous Rectification, 3 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3.Source General Des

 9.7. Size:708K  samwin
 swha069r10vs swi069r10vs swd069r10vs swp069r10vs.pdf

SW069R10VS N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220 MOSFET Features DFN5*6 TO-251 TO-252 TO-220 BVDSS 100V High ruggedness ID 70A Low RDS(ON) (Typ 7.1m )@VGS=10V RDS(ON) 7.1m @VGS=10V Low Gate Charge (Typ 45nC) Improved dv/dt Capability 9.0m @VGS=4.5V 1 100% Avalanche Tested G(4) 1 1 D(5,6,7,8) 2 2 2 3 3 3 A