Справочник MOSFET. SWD068R08E8T

 

SWD068R08E8T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SWD068R08E8T
   Маркировка: SW068R08E8T
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 128 nC
   trⓘ - Время нарастания: 60 ns
   Cossⓘ - Выходная емкость: 340 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm
   Тип корпуса: TO252

 Аналог (замена) для SWD068R08E8T

 

 

SWD068R08E8T Datasheet (PDF)

 ..1. Size:697K  samwin
 swd068r08e8t.pdf

SWD068R08E8T SWD068R08E8T

SW068R08E8TN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 80V High ruggednessID : 100A Low RDS(ON) (Typ 6.7m)@VGS=10VRDS(ON) :6.7m Low Gate Charge (Typ 128nC) Improved dv/dt Capability 2 100% Avalanche Tested 12 Application:Synchronous Rectification, 31Li Battery Protect Board, Motor Drivers1. Gate 2.Drain 3.Source3Genera

 7.1. Size:710K  samwin
 swd068r68e7t.pdf

SWD068R08E8T SWD068R08E8T

SW068R68E7TN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 68V High ruggednessID : 90A Low RDS(ON) (Typ 7.1m)@VGS=10VRDS(ON) : 7.1m Low Gate Charge (Typ 87nC) Improved dv/dt Capability 2 100% Avalanche Tested12 Application:Synchronous Rectification,31Li Battery Protect Board, Inverter1. Gate 2.Drain 3.SourceGeneral Descr

 9.1. Size:727K  samwin
 swd065r03vlt.pdf

SWD068R08E8T SWD068R08E8T

SW065R03VLTN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 30V High ruggednessID : 70A Low RDS(ON) (Typ 6.6m)@VGS=10V Low Gate Charge (Typ 33nC)RDS(ON) : 6.6m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Motor Drives11. Gate 2.Drain 3.Source3Genera

 9.2. Size:683K  samwin
 swd065r68e7t.pdf

SWD068R08E8T SWD068R08E8T

SW065R68E7T N-channel Enhanced mode TO-252 MOSFET TO-252 Features BVDSS : 68V High ruggedness ID : 90A Low RDS(ON) (Typ 6.3m)@VGS=10V RDS(ON) : 6.3m Low Gate Charge (Typ 75nC) Improved dv/dt Capability 1 2 2 100% Avalanche Tested 3 Application:Synchronous Rectification, 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3.Sourc

 9.3. Size:753K  samwin
 swi069r10vs swd069r10vs.pdf

SWD068R08E8T SWD068R08E8T

SW069R10VSN-channel Enhanced mode TO-251/TO-252 MOSFETFeaturesTO-251 TO-252BVDSS : 100V High ruggedness Low RDS(ON) (Typ 9.0m)@VGS=4.5VID : 70ALow RDS(ON) (Typ 7.1m)@VGS=10VRDS(ON) : 9.0m@VGS=4.5V Low Gate Charge (Typ 45nC) Improved dv/dt Capability 7.1m@VGS=10V 100% Avalanche Tested 11223 3 Application: Li Battery Protect Board,

 9.4. Size:784K  samwin
 swha069r10vs swi069r10vs swd069r10vs swp069r10vs swu069r10vs.pdf

SWD068R08E8T SWD068R08E8T

SW069R10VS N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220/TO-262 MOSFET Features TO-252 TO-220 TO-262 DFN5*6 TO-251 BVDSS : 100V High ruggedness Low RDS(ON) (Typ 9.0m)@VGS=4.5V ID : 70A 1 8 Low RDS(ON) (Typ 7.1m)@VGS=10V 2 7 6 3 RDS(ON) : 9.0m@VGS=4.5V Low Gate Charge (Typ 45nC) 4 5 Improved dv/dt Capability 7.1m@VGS=10V

 9.5. Size:702K  samwin
 swd062r08e8t.pdf

SWD068R08E8T SWD068R08E8T

SW062R08E8TN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 80V High ruggednessID : 110A Low RDS(ON) (Typ 6.0m)@VGS=10VRDS(ON) : 6.0m Low Gate Charge (Typ 141nC) Improved dv/dt Capability 2 100% Avalanche Tested12 Application:Synchronous Rectification,31Li Battery Protect Board, Inverter1. Gate 2.Drain 3.SourceGeneral Des

 9.6. Size:722K  samwin
 swd062r68e7t.pdf

SWD068R08E8T SWD068R08E8T

SW062R68E7TN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 68V High ruggednessID : 100A Low RDS(ON) (Typ 6.5m)@VGS=10VRDS(ON) : 6.5m Low Gate Charge (Typ 102nC) Improved dv/dt Capability 2 100% Avalanche Tested12 Application:Synchronous Rectification,31Li Battery Protect Board, Inverter1. Gate 2.Drain 3.SourceGeneral Des

 9.7. Size:708K  samwin
 swha069r10vs swi069r10vs swd069r10vs swp069r10vs.pdf

SWD068R08E8T SWD068R08E8T

SW069R10VS N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220 MOSFET Features DFN5*6 TO-251 TO-252 TO-220 BVDSS : 100V High ruggedness ID : 70A Low RDS(ON) (Typ 7.1m)@VGS=10V RDS(ON) : 7.1m@VGS=10V Low Gate Charge (Typ 45nC) Improved dv/dt Capability 9.0m@VGS=4.5V 1 100% Avalanche Tested G(4) 1 1 D(5,6,7,8) 2 2 2 3 3 3 A

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