SWD088R08E8T Todos los transistores

 

SWD088R08E8T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SWD088R08E8T
   Código: SW088R08E8T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 86 nC
   trⓘ - Tiempo de subida: 59 nS
   Cossⓘ - Capacitancia de salida: 213 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0111 Ohm
   Paquete / Cubierta: TO252

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SWD088R08E8T Datasheet (PDF)

 ..1. Size:750K  samwin
swd088r08e8t.pdf

SWD088R08E8T
SWD088R08E8T

SW088R08E8TN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 80V High ruggednessID : 80A Low RDS(ON) (Typ 9.7m)@VGS=10VRDS(ON) : 9.7m Low Gate Charge (Typ 86nC) Improved dv/dt Capability 2 100% Avalanche Tested12 Application:Synchronous Rectification,31Li Battery Protect Board, Inverter1. Gate 2.Drain 3.SourceGeneral Descr

 6.1. Size:681K  samwin
sw088r06vt swk088r06vt swi088r06vt swd088r06vt swha088r06vt.pdf

SWD088R08E8T
SWD088R08E8T

SW088R06VT N-channel Enhanced mode SOP-8/TO-251/TO-252/DFN5*6 MOSFET Features TO-251 TO-252 DFN5*6 SOP-8 BVDSS : 60V High ruggedness Low RDS(ON) (Typ 11m)@VGS=4.5V ID : 40A 5 6 Low RDS(ON) (Typ 9.2m)@VGS=10V 7 8 RDS(ON) : 11m@VGS=4.5V Low Gate Charge (Typ 48nC) 4 3 Improved dv/dt Capability 2 9.2m@VGS=10V 1 100% A

 6.2. Size:1012K  samwin
swi088r06vt swd088r06vt swha088r06vt.pdf

SWD088R08E8T
SWD088R08E8T

SW088R06VTN-channel Enhanced mode TO-251/TO-252/DFN5*6 MOSFETFeaturesTO-251TO-252 DFN5*6BVDSS : 60V High ruggedness Low RDS(ON) (Typ 11m)@VGS=4.5VID : 40A1 8Low RDS(ON) (Typ 9.2m)@VGS=10V2 7RDS(ON) : 11m@VGS=4.5V Low Gate Charge (Typ 48nC)6354 Improved dv/dt Capability 9.2m@VGS=10V 100% Avalanche Tested1 122 Applicati

 9.1. Size:782K  samwin
swd085r68e7t.pdf

SWD088R08E8T
SWD088R08E8T

SW085R68E7TN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 68V High ruggednessID : 70A Low RDS(ON) (Typ 10.2m)@VGS=10VRDS(ON) : 10.2m Low Gate Charge (Typ 47nC) Improved dv/dt Capability 2 100% Avalanche Tested12 Application:Synchronous Rectification,31Li Battery Protect Board, Inverter1. Gate 2.Drain 3.SourceGeneral Des

 9.2. Size:723K  samwin
swd086r68e7t.pdf

SWD088R08E8T
SWD088R08E8T

SW086R68E7TN-channel Enhanced mode TO-252 MOSFETFeaturesTO-252BVDSS : 68V High ruggednessID : 70A Low RDS(ON) (Typ 9.6m)@VGS=10VRDS(ON) : 9.6m Low Gate Charge (Typ 66nC) Improved dv/dt Capability 2 100% Avalanche Tested12 Application:Synchronous Rectification,31Li Battery Protect Board, Inverter1. Gate 2.Drain 3.SourceGeneral Descr

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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