SWD6N60D Todos los transistores

SW6N60D N-channel Enhanced mode TO-220F/TO-252/TO-251N MOSFET Features TO-220F TO-252 TO-251N BVDSS 600V High ruggedness ID 6A Low RDS(ON) (Typ 1.4 )@VGS=10V RDS(ON) 1.4 Low Gate Charge (Typ 23nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 3 3 3 Application UPS,Inverter,TV-POWER 1. Gate 2. Drain 3. Source

SW6N65K N-channel Enhanced mode TO-220F/TO-251/TO-251N/TO-252/TO-262 /TO-220SF MOSFET Features TO251 TO220F TO251N TO252 TO262 TO220SF BVDSS 650V High ruggedness ID 6A Low RDS(ON) (Typ 0.8 )@VGS=10V RDS(ON) 0.8 Low Gate Charge (Typ 17nC) Improved dv/dt Capability 2 1 1 100% Avalanche Tested 1 1 1 1 2 2 2 2 2 2 3 3 Applicat

SW6N65D N-channel Enhanced mode TO-252 MOSFET TO-252 BVDSS 650V Features ID 6A High ruggedness RDS(ON) 1.3 Low RDS(ON) (Typ 1.3 )@VGS=10V Low Gate Charge (Typ 22nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application LED , Charger 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET is

SW6N80D N-channel Enhanced mode TO-251N/TO-220F/TO-252/TO-262/TO-262N MOSFET Features TO-251N TO-220F TO-252 TO-262 BVDSS 800V TO-262N ID 6A High ruggedness Low RDS(ON) (Typ 2.0 )@VGS=10V RDS(ON) 2.0 Low Gate Charge (Typ 32nC) Improved dv/dt Capability 2 1 1 1 1 1 100% Avalanche Tested 2 2 2 2 2 3 3 3 3 3 Application LED

SW6N70DA N-channel Enhanced mode TO-251N/S/U/TO-252/TO-220F /TO-251/TO-251NX/TO-220/TO-251Q /TO-251MQ MOSFET TO251N TO251S TO251U TO252 TO220F Features BVDSS 700V l High ruggedness ID 6A l Low RDS(ON) (Typ 1.7 ) 1 1 RDS(ON) 1.7 1 1 @VGS=10V 2 2 2 2 1 3 3 2 3 3 l Low Gate Charge (Typ 26nC) 3 2 l Improved dv/dt Capability TO220 TO251Q TO251NX TO251 TO251MQ l

SW6N80DE N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS 800V High ruggedness ID 6A Low RDS(ON) (Typ 1.8 )@VGS=10V RDS(ON) 1.8 Low Gate Charge (Typ 36nC) Improved dv/dt Capability 100% Avalanche Tested 1 2 ESD protected 3 2 Application LED , Charger, SMPS 1. Gate 2. Drain 3. Source 1 General Description

SW6N70K N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-220F TO-251N TO-252 BVDSS 700V High ruggedness ID 6A Low RDS(ON) (Typ 1.1 )@VGS=10V RDS(ON) 1.1 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application Charger,LED,TV-Power 3 3 3 1. Gate 2. Drain 3. Source 1

SW6N70K N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-251N TO-220F TO-252 BVDSS 700V High ruggedness ID 6A Low RDS(ON) (Typ 1.1 )@VGS=10V RDS(ON) 1.1 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application Charge,LED,TV-Power 3 3 3 1. Gate 2. Drain 3. Source

SW6N70DA N-channel Enhanced mode TO-251N/S/U/TO-252/TO-220F /TO-251/TO-251NX/TO-220/TO-251Q /TO-251MQ MOSFET TO251N TO251S TO251U TO252 TO220F Features BVDSS 700V l High ruggedness ID 6A l Low RDS(ON) (Typ 1.7 ) 1 1 RDS(ON) 1.7 1 1 @VGS=10V 2 2 2 2 1 3 3 2 3 3 l Low Gate Charge (Typ 26nC) 3 2 l Improved dv/dt Capability TO220 TO251Q TO251NX TO251 TO251MQ l

SW6N80D N-channel Enhanced mode TO-251N/TO-220F/TO-252/TO-262/TO-262N MOSFET Features TO-251N TO-220F TO-252 BVDSS 800V TO-262 TO-262N ID 6A High ruggedness Low RDS(ON) (Typ 2.0 )@VGS=10V RDS(ON) 2.0 Low Gate Charge (Typ 32nC) Improved dv/dt Capability 2 1 1 1 1 1 100% Avalanche Tested 2 2 2 2 2 3 3 3 3 3 Application LED , Charger, SMPS 1.

SW6N70DB N-channel Enhanced mode TO-220F /TO-252/TO-251N MOSFET Features BVDSS 700V TO-220F TO-252 TO-251N ID 6A High ruggedness Low RDS(ON) (Typ 1.4 )@VGS=10V RDS(ON) 1.4 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 1 2 2 2 3 Application LED, PC Power, Charger 3 3 1 1. Gate 2. Drain 3. Source 3 Gen