SWD6N60D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SWD6N60D
Маркировка: SW6N60D
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 205 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 23 nC
trⓘ - Время нарастания: 25 ns
Cossⓘ - Выходная емкость: 1.7 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 4.5 Ohm
Тип корпуса: TO252
SWD6N60D Datasheet (PDF)
swf6n60d swd6n60d swn6n60d.pdf
SW6N60D N-channel Enhanced mode TO-220F/TO-252/TO-251N MOSFET Features TO-220F TO-252 TO-251N BVDSS : 600V High ruggedness ID : 6A Low RDS(ON) (Typ 1.4)@VGS=10V RDS(ON) :1.4 Low Gate Charge (Typ 23nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 3 3 3 Application: UPS,Inverter,TV-POWER 1. Gate 2. Drain 3. Source
swf6n65k swi6n65k swn6n65k swd6n65k swu6n65k swmn6n65k.pdf
SW6N65K N-channel Enhanced mode TO-220F/TO-251/TO-251N/TO-252/TO-262 /TO-220SF MOSFET Features TO251 TO220F TO251N TO252 TO262 TO220SF BVDSS : 650V High ruggedness ID : 6A Low RDS(ON) (Typ 0.8)@VGS=10V RDS(ON) : 0.8 Low Gate Charge (Typ 17nC) Improved dv/dt Capability 2 1 1 100% Avalanche Tested 1 1 1 1 2 2 2 2 2 2 3 3 Applicat
swd6n65d.pdf
SW6N65D N-channel Enhanced mode TO-252 MOSFET TO-252 BVDSS : 650V Features ID : 6A High ruggedness RDS(ON) : 1.3 Low RDS(ON) (Typ 1.3)@VGS=10V Low Gate Charge (Typ 22nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: LED , Charger 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET is
sw6n80d swn6n80d swf6n80d swd6n80d swu6n80d swj6n80d.pdf
SW6N80D N-channel Enhanced mode TO-251N/TO-220F/TO-252/TO-262/TO-262N MOSFET Features TO-251N TO-220F TO-252 TO-262 BVDSS : 800V TO-262N ID : 6A High ruggedness Low RDS(ON) (Typ 2.0)@VGS=10V RDS(ON) : 2.0 Low Gate Charge (Typ 32nC) Improved dv/dt Capability 2 1 1 1 1 1 100% Avalanche Tested 2 2 2 2 2 3 3 3 3 3 Application:LED
sw6n70da swn6n70da swsi6n70da swui6n70da swd6n70da swf6n70da swi6n70da swnx6n70da swp6n70da swqi6n70da swmqi6n70da.pdf
SW6N70DAN-channel Enhanced mode TO-251N/S/U/TO-252/TO-220F/TO-251/TO-251NX/TO-220/TO-251Q /TO-251MQ MOSFETTO251N TO251S TO251U TO252 TO220FFeaturesBVDSS : 700Vl High ruggednessID : 6Al Low RDS(ON) (Typ 1.7)1 1 RDS(ON) : 1.71 1 @VGS=10V 2 22 213 3 23 3l Low Gate Charge (Typ 26nC)32l Improved dv/dt Capability TO220 TO251Q TO251NXTO251 TO251MQ l
swd6n80de.pdf
SW6N80DE N-channel Enhanced mode TO-252 MOSFET Features TO-252 BVDSS : 800V High ruggedness ID : 6A Low RDS(ON) (Typ 1.8)@VGS=10V RDS(ON) : 1.8 Low Gate Charge (Typ 36nC) Improved dv/dt Capability 100% Avalanche Tested 1 2 ESD protected 3 2 Application:LED , Charger, SMPS 1. Gate 2. Drain 3. Source 1 General Description
swf6n70k swn6n70k swd6n70k.pdf
SW6N70K N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-220F TO-251N TO-252 BVDSS : 700V High ruggedness ID : 6A Low RDS(ON) (Typ 1.1)@VGS=10V RDS(ON) : 1.1 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:Charger,LED,TV-Power 3 3 3 1. Gate 2. Drain 3. Source 1
sw6n70k swf6n70k swn6n70k swd6n70k.pdf
SW6N70K N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-251N TO-220F TO-252 BVDSS : 700V High ruggedness ID : 6A Low RDS(ON) (Typ 1.1)@VGS=10V RDS(ON) : 1.1 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:Charge,LED,TV-Power 3 3 3 1. Gate 2. Drain 3. Source
swn6n70da swsi6n70da swui6n70da swd6n70da swf6n70da swi6n70da swnx6n70da swp6n70da swqi6n70da swmqi6n70da.pdf
SW6N70DAN-channel Enhanced mode TO-251N/S/U/TO-252/TO-220F/TO-251/TO-251NX/TO-220/TO-251Q /TO-251MQ MOSFETTO251N TO251S TO251U TO252 TO220FFeaturesBVDSS : 700Vl High ruggednessID : 6Al Low RDS(ON) (Typ 1.7)1 1 RDS(ON) : 1.71 1 @VGS=10V 2 22 213 3 23 3l Low Gate Charge (Typ 26nC)32l Improved dv/dt Capability TO220 TO251Q TO251NXTO251 TO251MQ l
swn6n80d swf6n80d swd6n80d swu6n80d swj6n80d.pdf
SW6N80DN-channel Enhanced mode TO-251N/TO-220F/TO-252/TO-262/TO-262N MOSFETFeaturesTO-251N TO-220F TO-252 BVDSS : 800VTO-262 TO-262NID : 6A High ruggedness Low RDS(ON) (Typ 2.0)@VGS=10VRDS(ON) : 2.0 Low Gate Charge (Typ 32nC) Improved dv/dt Capability 211 1 1 1 100% Avalanche Tested22 2 2 233 3 3 3 Application:LED , Charger, SMPS1.
swf6n70db swd6n70db swn6n70db.pdf
SW6N70DBN-channel Enhanced mode TO-220F /TO-252/TO-251N MOSFETFeaturesBVDSS : 700VTO-220F TO-252 TO-251NID : 6A High ruggedness Low RDS(ON) (Typ 1.4)@VGS=10VRDS(ON) : 1.4 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 21 100% Avalanche Tested112223 Application:LED, PC Power, Charger 3311. Gate 2. Drain 3. Source3Gen
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: SSM9928O | IXTP15N50L2
History: SSM9928O | IXTP15N50L2
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918