2SK2927 Todos los transistores

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2SK2927 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK2927

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 30 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Conductancia de drenaje-sustrato (Cd): 350 pF

Resistencia drenaje-fuente RDS(on): 0.09 Ohm

Empaquetado / Estuche: TO220AB

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2SK2927 Datasheet (PDF)

1.1. 2sk2927.pdf Size:94K _renesas

2SK2927
2SK2927

2SK2927 Silicon N Channel MOS FET High Speed Power Switching REJ03G1041-0600 (Previous: ADE-208-550D) Rev.6.00 Sep 07, 2005 Features Low on-resistance RDS =0.055 ? typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Source 1 2 S 3

1.2. rej03g1041 2sk2927ds.pdf Size:103K _renesas

2SK2927
2SK2927

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.1. 2sk2920.pdf Size:409K _toshiba

2SK2927
2SK2927

2SK2920 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2920 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain-source ON resistance : R = 0.56 ? (typ.) DS (ON) High forward transfer admittance : |Y | = 4.5 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 200 V) DS Enhancement-mode : V =

4.2. 2sk2925.pdf Size:95K _renesas

2SK2927
2SK2927

2SK2925(L),2SK2925(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1039-0500 (Previous: ADE-208-454B) Rev.5.00 Sep 07, 2005 Features Low on-resistance RDS = 0.060 ? typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(L)-(2)) (Pac

4.3. rej03g1043 2sk2929ds.pdf Size:101K _renesas

2SK2927
2SK2927

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.4. 2sk2928.pdf Size:87K _renesas

2SK2927
2SK2927

2SK2928 Silicon N Channel MOS FET High Speed Power Switching REJ03G1042-0400 (Previous: ADE-208-551B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 0.040 ? typ. 4 V gate drive devices. High speed switching Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Source 1 2 S 3 Rev.4.00 Sep 07, 2005

4.5. rej03g1039 2sk2925lsds.pdf Size:109K _renesas

2SK2927
2SK2927

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.6. rej03g1042 2sk2928ds.pdf Size:101K _renesas

2SK2927
2SK2927

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.7. 2sk2926.pdf Size:96K _renesas

2SK2927
2SK2927

2SK2926(L), 2SK2926(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1040-0200 (Previous: ADE-208-535) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 0.042 ? typ. 4 V gate drive devices. High speed switching Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(L)-(2)) (Package name: DPAK(S)) 4 D

4.8. rej03g1040 2sk2926lsds.pdf Size:110K _renesas

2SK2927
2SK2927

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.9. 2sk2929.pdf Size:87K _renesas

2SK2927
2SK2927

2SK2929 Silicon N Channel MOS FET High Speed Power Switching REJ03G1043-0500 (Previous: ADE-208-552C) Rev.5.00 Sep 07, 2005 Features Low on-resistance RDS =0.026 ? typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Source 1 2 S 3

4.10. 2sk2926-zj.pdf Size:1480K _kexin

2SK2927
2SK2927

SMD Type MOSFET N-Channel MOSFET 2SK2926-ZJ ■ Features ● VDS (V) = 60V ● ID = 15 A (VGS = 10V) ● RDS(ON) < 55mΩ (VGS = 10V) ● RDS(ON) < 110mΩ (VGS = 4V) ● High speed switching D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 Continuous Drain Current ID 15 Pulsed Drai

Otros transistores... 2SK2849-01L , 2SK2849-01S , 2SK2851 , 2SK2869 , 2SK2885 , 2SK2912 , 2SK2925 , 2SK2926 , STP75NF75 , 2SK2928 , 2SK2929 , 2SK2930 , 2SK2931 , 2SK2932 , 2SK2933 , 2SK2934 , 2SK2935 .

 


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