2SK2927 Silicon N Channel MOS FET High Speed Power Switching REJ03G1041-0600 (Previous: ADE-208-550D) Rev.6.00 Sep 07, 2005 Features Low on-resistance RDS =0.055 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)D1. GateG2. Drain(Flange)3. Source

isc N-Channel MOSFET Transistor 2SK2927FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 75m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Power F-MOS FETs2SK2924Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed: EAS > 100mJ unit: mm VGSS = 30V guaranteed4.60.2 High-speed switching: tf = 35ns9.90.3 2.90.2 No secondary breakdown 3.20.1 Applications Contactless relay Diving circuit for a solenoid2.60.11.20.15 Driving circuit for a motor1.450.15 0.70.

Power F-MOS FETs2SK2923Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switchingunit: mm Low ON-resistance4.60.2 No secondary breakdown9.90.3 2.90.2 Low-voltage drive 3.20.1 Applications Contactless relay Diving circuit for a solenoid Driving circuit for a motor2.60.11.20.15 Control equipment1.450

2SK2920 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2920 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain-source ON resistance : R = 0.56 (typ.) DS (ON) High forward transfer admittance : |Y | = 4.5 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 200 V) DS Enhancement-mod

2SK2926(L), 2SK2926(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1040-0200 (Previous: ADE-208-535) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 0.042 typ. 4 V gate drive devices. High speed switching Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C(Package name: DPAK(L)-(2)) (Package name: DP

2SK2925(L),2SK2925(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1039-0500 (Previous: ADE-208-454B) Rev.5.00 Sep 07, 2005 Features Low on-resistance RDS = 0.060 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C(Package name: DPAK(L

2SK2928 Silicon N Channel MOS FET High Speed Power Switching REJ03G1042-0400 (Previous: ADE-208-551B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 0.040 typ. 4 V gate drive devices. High speed switching Outline RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)D1. GateG2. Drain(Flange)3. Source12 S3Rev.4.00 Se

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK2929 Silicon N Channel MOS FET High Speed Power Switching REJ03G1043-0500 (Previous: ADE-208-552C) Rev.5.00 Sep 07, 2005 Features Low on-resistance RDS =0.026 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)D1. GateG2. Drain(Flange)3. Source

SMD Type MOSFETN-Channel MOSFET2SK2926-ZJ Features VDS (V) = 60V ID = 15 A (VGS = 10V) RDS(ON) 55m (VGS = 10V) RDS(ON) 110m (VGS = 4V) High speed switchingDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gate-Source Voltage VGS 20 Continuous Drain Current ID 15 Pulsed Drai

isc N-Channel MOSFET Transistor 2SK2924FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 350V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK2923FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 80m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK2928FEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 52m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor 2SK2925SFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R =80m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor 2SK2926LFEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R =55m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor 2SK2925LFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R =80m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor 2SK2926SFEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R =55m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor 2SK2929FEATURESDrain Current : I = 25A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 34m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d