SWF13N80K Todos los transistores

 ..1. Size:623K  samwin
 swf13n80k.pdf

SW13N80K N-channel Enhanced mode TO-220F MOSFET TO-220F BVDSS 800V Features ID 13A High ruggedness RDS(ON) 0.44 Low RDS(ON) (Typ 0.44 )@VGS=10V Low Gate Charge (Typ 42nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application LED , Charger, SMPS 1. Gate 2. Drain 3. Source 3 General Description This powe

 8.1. Size:818K  samwin
 swf13n65d.pdf

SW13N65D N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS 650V High ruggedness Low RDS(ON) (Typ 0.6 )@VGS=10V ID 13A Low Gate Charge (Typ 54nC) RDS(ON) 0.6 Improved dv/dt Capability 100% Avalanche Tested 2 1 Application LED, Charger, PC Power 2 3 1 1. Gate 2. Drain 3. Source General Description 3 This power MOSFET is produced

 8.2. Size:816K  samwin
 swf13n50d swp13n50d.pdf

SW13N50D N-channel Enhancement mode TO-220F/TO-220 MOSFET TO-220F BVDSS 500V Features TO-220 ID 13A High ruggedness RDS(ON) 0.46 RDS(ON) (Typ 0.46 )@VGS=10V Gate Charge (Typ 47nC) 2 Improved dv/dt Capability 100% Avalanche Tested 1 1 2 2 Application LED,Charger 3 3 1 1. Gate 2. Drain 3. Source 3 General Description Thi

 8.3. Size:592K  samwin
 swf13n70d.pdf

SW13N70D N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS 700V High ruggedness Low RDS(ON) (Typ 0.7 )@VGS=10V ID 13A Low Gate Charge (Typ 52nC) RDS(ON) 0.7 Improved dv/dt Capability 100% Avalanche Tested 2 1 Application LED, TV-Power, Charger 2 3 1 1. Gate 2. Drain 3. Source General Description 3 This pow

 8.4. Size:596K  samwin
 swf13n60d.pdf

SW13N60D N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS 600V High ruggedness Low RDS(ON) (Typ 0.5 )@VGS=10V ID 13A Low Gate Charge (Typ 54nC) RDS(ON) 0.5 Improved dv/dt Capability 100% Avalanche Tested 2 1 Application LED, PC Power, Charger 2 3 1 1. Gate 2. Drain 3. Source General Description 3 This pow

 8.5. Size:878K  samwin
 swf13n60k2 swi13n60k2 swd13n60k2.pdf

SW13N60K2 N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET BVDSS 600V Features TO-220F TO-251 TO-252 ID 13A High ruggedness RDS(ON) 0.24 Low RDS(ON) (Typ 0.24 )@VGS=10V Low Gate Charge (Typ 28nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 1 3 3 3 Application LED, Charger, Adaptor 1. Gate 2. Drain 3

 8.6. Size:1576K  samwin
 swf13n65k2 swi13n65k2 swd13n65k2 swp13n65k2 swj13n65k2 swb13n65k2 swha13n65k2 swhc13n65k2.pdf

SW13N65K2 N-channel Enhanced mode TO-220F/TO-251/TO-252/TO-220/TO-262N/TO-263/ DFN5*6/QFN8*8 MOSFET Features QFN8*8 TO220F TO251 TO252 TO220 TO262N TO263 DFN5*6 BVDSS 650V High ruggedness 5 ID 13A 1 8 Low RDS(ON) (Typ 0.24 ) 2 7 6 @VGS=10V 3 RDS(ON) 0.24 1 1 1 1 4 5 1 1 Low Gate Charge (Typ 28nC) 2 2 2 2 1 2 3 4 2 2 3