SWF20N70K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SWF20N70K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35.9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 52 nS
   Cossⓘ - Capacitancia de salida: 79 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
   Paquete / Cubierta: TO220F

Búsqueda de reemplazo de MOSFET SWF20N70K

SWF20N70K Datasheet (PDF)

..1. Size:696K samwin
swf20n70k.pdf

SW20N70K N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS : 700V ID : 20A High ruggedness Low RDS(ON) (Typ 0.17)@VGS=10V RDS(ON) : 0.17 Low Gate Charge (Typ 60nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application:LED,Charger,PC Power 1 1. Gate 2. Drain 3. Source 3 General Description This power

8.1. Size:694K samwin
swf20n60k.pdf

SW20N60K N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS : 600V ID : 20A High ruggedness Low RDS(ON) (Typ 0.15)@VGS=10V RDS(ON) : 0.15 Low Gate Charge (Typ 60nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application:LED,Charger,PC Power 1 1. Gate 2. Drain 3. Source 3 General Description This power

8.2. Size:716K samwin
swf20n65d swt20n65d.pdf

SW20N65D N-channel Enhanced mode TO-220F/TO-247 MOSFET TO-220F TO-247 BVDSS : 650V Features ID : 20A High ruggedness RDS(ON) : 0.31 Low RDS(ON) (Typ 0.31)@VGS=10V Low Gate Charge (Typ 88nC) 2 Improved dv/dt Capability 1 1 100% Avalanche Tested 2 2 1 3 3 Application:Charger, Adaptor, LED 1. Gate 2. Drain 3. Source 3 General Desc

8.3. Size:1121K samwin
swp20n65k swf20n65k sww20n65k swj20n65k.pdf

SW20N65K N-channel Enhanced mode TO-220/TO-220F/TO-3P/TO-262N MOSFET Features TO-220 TO-220F TO-3P TO-262N BVDSS : 650V High ruggedness ID : 20A Low RDS(ON) (Typ 0.16)@VGS=10V RDS(ON) : 0.16 Low Gate Charge (Typ 60nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 2 2 2 2 Application:LED, Charger, PC Power 3 3 3 3 1. Gat

8.4. Size:803K samwin
swf20n50d swt20n50d.pdf

SW20N50D N-channel Enhanced mode TO-220F/TO-247 MOSFET Features TO-220F TO-247 BVDSS : 500V ID : 20A High ruggedness Low RDS(ON) (Typ 0.19)@VGS=10V RDS(ON) : 0.19 Low Gate Charge (Typ 82nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application:Charger, Adaptor, LED 3 3 1 1. Gate 2. Drain 3. Source 3 General De

8.5. Size:663K samwin
swf20n65k2.pdf

SW20N65K2 N-channel Enhanced mode TO-220F MOSFET TO-220F BVDSS : 650V Features ID : 20A High ruggedness RDS(ON) : 0.15 Low RDS(ON) (Typ 0.15)@VGS=10V Low Gate Charge (Typ 37nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 1 2 3 Application: Charger, LED, PC Power 1. Gate 2. Drain 3. Source 3 General Description This

8.6. Size:647K samwin
sw20n60k swf20n60k.pdf

SW20N60K N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS : 600V ID : 20A High ruggedness Low RDS(ON) (Typ 0.15)@VGS=10V RDS(ON) : 0.15 Low Gate Charge (Typ 60nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application:LED,Charge,PC Power 1 1. Gate 2. Drain 3. Source 3 General Description This power

8.7. Size:635K samwin
sw20n65k2 swf20n65k2.pdf

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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