SWF20N70K MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SWF20N70K
Маркировка: SW20N70K
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 35.9 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 60 nC
trⓘ - Время нарастания: 52 ns
Cossⓘ - Выходная емкость: 79 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.2 Ohm
Тип корпуса: TO220F
SWF20N70K Datasheet (PDF)
swf20n70k.pdf
SW20N70K N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS : 700V ID : 20A High ruggedness Low RDS(ON) (Typ 0.17)@VGS=10V RDS(ON) : 0.17 Low Gate Charge (Typ 60nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application:LED,Charger,PC Power 1 1. Gate 2. Drain 3. Source 3 General Description This power
swf20n60k.pdf
SW20N60K N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS : 600V ID : 20A High ruggedness Low RDS(ON) (Typ 0.15)@VGS=10V RDS(ON) : 0.15 Low Gate Charge (Typ 60nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application:LED,Charger,PC Power 1 1. Gate 2. Drain 3. Source 3 General Description This power
swf20n65d swt20n65d.pdf
SW20N65D N-channel Enhanced mode TO-220F/TO-247 MOSFET TO-220F TO-247 BVDSS : 650V Features ID : 20A High ruggedness RDS(ON) : 0.31 Low RDS(ON) (Typ 0.31)@VGS=10V Low Gate Charge (Typ 88nC) 2 Improved dv/dt Capability 1 1 100% Avalanche Tested 2 2 1 3 3 Application:Charger, Adaptor, LED 1. Gate 2. Drain 3. Source 3 General Desc
swp20n65k swf20n65k sww20n65k swj20n65k.pdf
SW20N65K N-channel Enhanced mode TO-220/TO-220F/TO-3P/TO-262N MOSFET Features TO-220 TO-220F TO-3P TO-262N BVDSS : 650V High ruggedness ID : 20A Low RDS(ON) (Typ 0.16)@VGS=10V RDS(ON) : 0.16 Low Gate Charge (Typ 60nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 2 2 2 2 Application:LED, Charger, PC Power 3 3 3 3 1. Gat
swf20n50d swt20n50d.pdf
SW20N50D N-channel Enhanced mode TO-220F/TO-247 MOSFET Features TO-220F TO-247 BVDSS : 500V ID : 20A High ruggedness Low RDS(ON) (Typ 0.19)@VGS=10V RDS(ON) : 0.19 Low Gate Charge (Typ 82nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application:Charger, Adaptor, LED 3 3 1 1. Gate 2. Drain 3. Source 3 General De
swf20n65k2.pdf
SW20N65K2 N-channel Enhanced mode TO-220F MOSFET TO-220F BVDSS : 650V Features ID : 20A High ruggedness RDS(ON) : 0.15 Low RDS(ON) (Typ 0.15)@VGS=10V Low Gate Charge (Typ 37nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 1 2 3 Application: Charger, LED, PC Power 1. Gate 2. Drain 3. Source 3 General Description This
sw20n60k swf20n60k.pdf
SW20N60K N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS : 600V ID : 20A High ruggedness Low RDS(ON) (Typ 0.15)@VGS=10V RDS(ON) : 0.15 Low Gate Charge (Typ 60nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application:LED,Charge,PC Power 1 1. Gate 2. Drain 3. Source 3 General Description This power
sw20n65k2 swf20n65k2.pdf
SW20N65K2 N-channel Enhanced mode TO-220F MOSFET TO-220F BVDSS : 650V Features ID : 20A High ruggedness RDS(ON) : 0.15 Low RDS(ON) (Typ 0.15)@VGS=10V Low Gate Charge (Typ 37nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 1 2 3 Application: Charger, LED, PC Power 1. Gate 2. Drain 3. Source 3 General Description This
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918