SWI085R06VS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SWI085R06VS Datasheet (PDF)

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SW085R06VSN-channel Enhanced mode TO-251 MOSFETFeaturesTO-251BVDSS : 60V High ruggednessID : 85A Low RDS(ON) (Typ 13m)@VGS=4.5V(Typ 9m)@VGS=10VRDS(ON) :13m@VGS=4.5V Low Gate Charge (Typ 19nC)9m@VGS=10V Improved dv/dt Capability 1 100% Avalanche Tested 223 Application:Synchronous Rectification,Li Battery Protect Board, Inverter 1.

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SW088R06VT N-channel Enhanced mode SOP-8/TO-251/TO-252/DFN5*6 MOSFET Features TO-251 TO-252 DFN5*6 SOP-8 BVDSS : 60V High ruggedness Low RDS(ON) (Typ 11m)@VGS=4.5V ID : 40A 5 6 Low RDS(ON) (Typ 9.2m)@VGS=10V 7 8 RDS(ON) : 11m@VGS=4.5V Low Gate Charge (Typ 48nC) 4 3 Improved dv/dt Capability 2 9.2m@VGS=10V 1 100% A

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SW088R06VTN-channel Enhanced mode TO-251/TO-252/DFN5*6 MOSFETFeaturesTO-251TO-252 DFN5*6BVDSS : 60V High ruggedness Low RDS(ON) (Typ 11m)@VGS=4.5VID : 40A1 8Low RDS(ON) (Typ 9.2m)@VGS=10V2 7RDS(ON) : 11m@VGS=4.5V Low Gate Charge (Typ 48nC)6354 Improved dv/dt Capability 9.2m@VGS=10V 100% Avalanche Tested1 122 Applicati

Otros transistores... SWHA7N65M , SWHA80N06V1 , SWHA80N08V1 , SWHC13N65K2 , SWI051R08ES , SWI055R03VT , SWI069R06VT , SWI075R06ET , AO4468 , SWI100R10VT , SWI110R06VT , SWI120R45VT , SWI130R06VT , SWI13N60K2 , SWI13N65K2 , SWI160R12VT , SWI19N10 .