SWI4N65DB Todos los transistores

 ..1. Size:757K  samwin
 swi4n65db.pdf

SW4N65DB N-channel Enhanced mode TO-251 MOSFET TO-251 BVDSS 650V Features ID 4A High ruggedness RDS(ON) 1.7 Low RDS(ON) (Typ 1.7 )@VGS=10V Low Gate Charge (Typ 20nC) 2 Improved dv/dt Capability 1 2 100% Avalanche Tested 3 Application LED, Charger, Adaptor 1. Gate 2. Drain 3. Source 1 3 General Description This power MO

 6.1. Size:789K  samwin
 swi4n65dc swnc4n65dc.pdf

SW4N65DC N-channel Enhanced mode TO-251/TO-251N-S2 MOSFET TO-251 TO-251N-S2 BVDSS 650V Features ID 4A High ruggedness RDS(ON) 1.95 Low RDS(ON) (Typ 1.95 )@VGS=10V Low Gate Charge (Typ 17nC) 2 Improved dv/dt Capability 1 1 100% Avalanche Tested 2 1 2 3 3 Application Charger,TV-POWER 1. Gate 2. Drain 3. Source 3 Gener

 7.1. Size:840K  samwin
 swf4n65k swi4n65k swd4n65k.pdf

SW4N65K N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features TO-220F TO-251 TO-252 BVDSS 650V High ruggedness ID 4A Low RDS(ON) (Typ 1 )@VGS=10V Low Gate Charge (Typ13 nC) RDS(ON) 1 Improved dv/dt Capability 100% Avalanche Tested 2 1 1 1 Application Adapter,LED,Charger, 2 2 2 3 3 3 TV-Power 1 1. Gate 2. Drain 3. Sour

 8.1. Size:628K  samwin
 sw4n60dc swi4n60dc swd4n60dc.pdf

SW4N60DC N-channel Enhancement mode TO-251/TO-252 MOSFET Features TO-251 TO-252 BVDSS 600V ID 4A High ruggedness RDS(ON) (Typ 2.0 )@VGS=10V RDS(ON) 2.0 Gate Charge (Typ 17nC) Improved dv/dt Capability 1 2 1 2 100% Avalanche Tested 2 3 3 Application LED,Charge 1 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET is produce

 8.2. Size:958K  samwin
 swf4n60k swi4n60k swd4n60k.pdf

SW4N60K N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features TO-220F TO-251 TO-252 BVDSS 600V High ruggedness ID 4A Low RDS(ON) (Typ 1 )@VGS=10V RDS(ON) 1 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application Adapter,LED, Charger 3 3 3 1. Gate 2. Drain 3. Source 1 3

 8.3. Size:916K  samwin
 swf4n60d swy4n60d swi4n60d swsi4n60d swmi4n60d swd4n60d.pdf

SW4N60D N-channel Enhancement mode TO-220F/TO-220FT/TO-251/S/M/TO-252 MOSFET Features BVDSS 600V TO-251S TO-251M TO-252 TO-220F TO-220FT TO-251 ID 4A High ruggedness Low RDS(ON) (Typ 1.9 ) RDS(ON) 1.9 @VGS=10V Low Gate Charge (Typ 18nC) 1 1 1 2 1 1 2 1 2 2 2 3 Improved dv/dt Capability 2 3 3 2 3 3 3 100% Avalanche T

 8.4. Size:610K  samwin
 swi4n60dc swd4n60dc.pdf

SW4N60DC N-channel Enhancement mode TO-251/TO-252 MOSFET Features TO-251 TO-252 BVDSS 600V ID 4A High ruggedness Low RDS(ON) (Typ 2.0 )@VGS=10V RDS(ON) 2.0 Low Gate Charge (Typ 17nC) Improved dv/dt Capability 1 1 2 2 100% Avalanche Tested 2 3 3 Application LED,Charger 1 1. Gate 2. Drain 3. Source 3 General Descrip