FDS6898A Todos los transistores

 

FDS6898A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDS6898A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 9.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 440 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: SO-8

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FDS6898A datasheet

 ..1. Size:81K  fairchild semi
 fds6898a.pdf pdf_icon

FDS6898A

OCTOBER 2001 FDS6898A Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 9.4 A, 20 V RDS(ON) = 14 m @ VGS = 4.5 V using Fairchild Semiconductor s advanced RDS(ON) = 18 m @ VGS = 2.5 V PowerTrench process that has been especially tailored Low gate charge (16 nC typical) to mini

 0.1. Size:326K  fairchild semi
 fds6898az f085.pdf pdf_icon

FDS6898A

February 2010 tm FDS6898AZ_F085 Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 9.4 A, 20 V RDS(ON) = 14 m @ VGS = 4.5 V using Fairchild Semiconductor s advanced RDS(ON) = 18 m @ VGS = 2.5 V PowerTrench process that has been especially tailored Low gate charge (16 nC typica

 0.2. Size:77K  fairchild semi
 fds6898az.pdf pdf_icon

FDS6898A

October 2001 FDS6898AZ Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 9.4 A, 20 V RDS(ON) = 14 m @ VGS = 4.5 V using Fairchild Semiconductor s advanced RDS(ON) = 18 m @ VGS = 2.5 V PowerTrench process that has been especially tailored Low gate charge (16 nC typical) to min

 0.3. Size:346K  onsemi
 fds6898az-f085.pdf pdf_icon

FDS6898A

FDS6898AZ-F085 Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 9.4 A, 20 V RDS(ON) = 14 m @ VGS = 4.5 V using ON Semiconductor s advanced RDS(ON) = 18 m @ VGS = 2.5 V PowerTrench process that has been especially tailored Low gate charge (16 nC typical) to minimize the on-s

MOSTRAR MÁS

Otros transistores... STA6610 , FDS6690AS , STA4470 , FDS6692A , SP8651 , FDS6699S , SP8611 , FDS6892A , IRFB4110 , FDS6898AZ , FDS6898AZF085 , FDS6900AS , SP8608 , FDS6910 , SP8601 , FDS6911 , FDS6930B .

History: NTA7002N

 

 

 

 

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