All MOSFET. FDS6898A Datasheet

 

FDS6898A Datasheet and Replacement


   Type Designator: FDS6898A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 9.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 440 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: SO-8
 

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FDS6898A Datasheet (PDF)

 ..1. Size:81K  fairchild semi
fds6898a.pdf pdf_icon

FDS6898A

OCTOBER 2001FDS6898ADual N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 9.4 A, 20 V RDS(ON) = 14 m @ VGS = 4.5 Vusing Fairchild Semiconductors advancedRDS(ON) = 18 m @ VGS = 2.5 VPowerTrench process that has been especially tailored Low gate charge (16 nC typical)to mini

 0.1. Size:326K  fairchild semi
fds6898az f085.pdf pdf_icon

FDS6898A

February 2010tmFDS6898AZ_F085Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 9.4 A, 20 V RDS(ON) = 14 m @ VGS = 4.5 Vusing Fairchild Semiconductors advancedRDS(ON) = 18 m @ VGS = 2.5 VPowerTrench process that has been especially tailored Low gate charge (16 nC typica

 0.2. Size:77K  fairchild semi
fds6898az.pdf pdf_icon

FDS6898A

October 2001FDS6898AZDual N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 9.4 A, 20 V RDS(ON) = 14 m @ VGS = 4.5 Vusing Fairchild Semiconductors advancedRDS(ON) = 18 m @ VGS = 2.5 VPowerTrench process that has been especially tailored Low gate charge (16 nC typical)to min

 0.3. Size:346K  onsemi
fds6898az-f085.pdf pdf_icon

FDS6898A

FDS6898AZ-F085Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral DescriptionFeaturesThese N-Channel Logic Level MOSFETs are produced 9.4 A, 20 V RDS(ON) = 14 m @ VGS = 4.5 Vusing ON Semiconductors advanced RDS(ON) = 18 m @ VGS = 2.5 VPowerTrench process that has been especially tailored Low gate charge (16 nC typical)to minimize the on-s

Datasheet: STA6610 , FDS6690AS , STA4470 , FDS6692A , SP8651 , FDS6699S , SP8611 , FDS6892A , IRF640N , FDS6898AZ , FDS6898AZF085 , FDS6900AS , SP8608 , FDS6910 , SP8601 , FDS6911 , FDS6930B .

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