FDS6898A Datasheet. Specs and Replacement

Type Designator: FDS6898A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 9.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 440 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: SO-8

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FDS6898A datasheet

 ..1. Size:81K  fairchild semi
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FDS6898A

OCTOBER 2001 FDS6898A Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 9.4 A, 20 V RDS(ON) = 14 m @ VGS = 4.5 V using Fairchild Semiconductor s advanced RDS(ON) = 18 m @ VGS = 2.5 V PowerTrench process that has been especially tailored Low gate charge (16 nC typical) to mini... See More ⇒

 0.1. Size:326K  fairchild semi
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FDS6898A

February 2010 tm FDS6898AZ_F085 Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 9.4 A, 20 V RDS(ON) = 14 m @ VGS = 4.5 V using Fairchild Semiconductor s advanced RDS(ON) = 18 m @ VGS = 2.5 V PowerTrench process that has been especially tailored Low gate charge (16 nC typica... See More ⇒

 0.2. Size:77K  fairchild semi
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FDS6898A

October 2001 FDS6898AZ Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 9.4 A, 20 V RDS(ON) = 14 m @ VGS = 4.5 V using Fairchild Semiconductor s advanced RDS(ON) = 18 m @ VGS = 2.5 V PowerTrench process that has been especially tailored Low gate charge (16 nC typical) to min... See More ⇒

 0.3. Size:346K  onsemi
 fds6898az-f085.pdf pdf_icon

FDS6898A

FDS6898AZ-F085 Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 9.4 A, 20 V RDS(ON) = 14 m @ VGS = 4.5 V using ON Semiconductor s advanced RDS(ON) = 18 m @ VGS = 2.5 V PowerTrench process that has been especially tailored Low gate charge (16 nC typical) to minimize the on-s... See More ⇒

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Detailed specifications: STA6610, FDS6690AS, STA4470, FDS6692A, SP8651, FDS6699S, SP8611, FDS6892A, 2N7002, FDS6898AZ, FDS6898AZF085, FDS6900AS, SP8608, FDS6910, SP8601, FDS6911, FDS6930B

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