SWJ7N70K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

..1. Size:970K samwin
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SW7N70K N-channel Enhanced mode TO-220F/TO-251/TO-252/TO-220/TO-262N MOSFET BVDSS : 700V TO-262N TO-220F TO-251 TO-252 TO-220 Features ID : 7A High ruggedness RDS(ON) : 0.81 Low RDS(ON) (Typ 0.81)@VGS=10V Low Gate Charge (Typ 17nC) 2 Improved dv/dt Capability 1 1 1 2 2 1 1 2 100% Avalanche Tested 2 2 3 3 3 3 3 Application:

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SW7N70D N-channel Enhanced mode TO-252/TO-251N/TO-262N/TO-220F MOSFET Features TO-262N TO-220F TO-251N TO-252 BVDSS : 700V High ruggedness ID : 7A Low RDS(ON) (Typ 1.2)@VGS=10V RDS(ON) : 1.2 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 1 100% Avalanche Tested 2 1 1 1 2 2 3 2 2 Application:LED, Charger, TV-Power 3

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SW7N70D N-channel Enhanced mode TO-252/TO-251N/TO-262N/TO-220F MOSFET Features TO-262N TO-220F TO-251N TO-252 BVDSS : 700V High ruggedness ID : 7A Low RDS(ON) (Typ 1.2)@VGS=10V RDS(ON) : 1.2 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 1 100% Avalanche Tested 2 1 1 1 2 2 3 2 2 Application:LED, Charger, TV-Power 3

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SW7N65DN-channel Enhanced mode TO-220/TO-251/TO-251N/TO-252/TO-220F/TO-220SF /TO-262N/DFN5*6 MOSFETFeaturesTO-220 TO-251TO-251N TO-252BVDSS : 650V High ruggednessID : 7A Low RDS(ON) (Typ 1.1)@VGS=10V RDS(ON) : 1.11 11122 Low Gate Charge (Typ 30nC) 223333 Improved dv/dt Capability DDFN5*6TO-220F TO-220SF TO-262N 100% Avalan

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SW7N65DA N-channel Enhanced mode TO-251N/TO-262N/TO-252 MOSFET Features TO-262N TO-251N TO-252 BVDSS : 650V High ruggedness ID : 7A Low RDS(ON) (Typ 1.4)@VGS=10V RDS(ON) : 1.4 Low Gate Charge (Typ 25nC) Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 2 2 2 3 3 3 1 Application: LED , Charge, PC Power 1. Gate 2. Drai

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SW7N80D N-channel Enhanced mode TO-220F/TO-262/TO-262N MOSFET TO-220F TO-262 TO-262N BVDSS : 800V Features ID : 7A High ruggedness RDS(ON) : 1.5 Low RDS(ON) (Typ 1.5)@VGS=10V Low Gate Charge (Typ 39nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 1 3 3 3 Application: LED , Charger, SMPS 1. Gate 2. Drain 3. Source

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SW7N80D N-channel Enhanced mode TO-220F/TO-262/TO-262N MOSFET TO-220F TO-262 TO-262N BVDSS : 800V Features ID : 7A High ruggedness RDS(ON) : 1.5 Low RDS(ON) (Typ 1.5)@VGS=10V Low Gate Charge (Typ 39nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 1 3 3 3 Application: LED , Charger, SMPS 1. Gate 2. Drain 3. Source

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SW7N65DN-channel Enhanced mode TO-220/TO-251/TO-251N/TO-252/TO-220F/TO-220SF /TO-262N/DFN5*6 MOSFETFeaturesTO-220 TO-251TO-251N TO-252BVDSS : 650V High ruggednessID : 7A Low RDS(ON) (Typ 1.1)@VGS=10V RDS(ON) : 1.11 11122 Low Gate Charge (Typ 30nC) 223333 Improved dv/dt Capability DDFN5*6TO-220F TO-220SF TO-262N 100% Avalan

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SW7N65DN-channel Enhanced mode TO-220/TO-251/TO-251N/TO-251U/TO-252/TO-220F/TO-220SF/TO-262N/DFN5*6/TO-220FT MOSFETFeaturesTO-220 TO-251TO-251N TO-251U TO-252BVDSS : 650V High ruggednessID : 7A Low RDS(ON) (Typ 1.1)@VGS=10V RDS(ON) : 1.11 11 112 2 Low Gate Charge (Typ 30nC) 2 22333 33 Improved dv/dt Capability DTO-220FT TO-262N DFN

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