SWJ7N70K Specs and Replacement

Type Designator: SWJ7N70K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 133 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34 nS

Cossⓘ - Output Capacitance: 31 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO262

SWJ7N70K substitution

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SWJ7N70K datasheet

 ..1. Size:970K  samwin
swf7n70k swi7n70k swd7n70k swp7n70k swj7n70k.pdf pdf_icon

SWJ7N70K

SW7N70K N-channel Enhanced mode TO-220F/TO-251/TO-252/TO-220/TO-262N MOSFET BVDSS 700V TO-262N TO-220F TO-251 TO-252 TO-220 Features ID 7A High ruggedness RDS(ON) 0.81 Low RDS(ON) (Typ 0.81 )@VGS=10V Low Gate Charge (Typ 17nC) 2 Improved dv/dt Capability 1 1 1 2 2 1 1 2 100% Avalanche Tested 2 2 3 3 3 3 3 Application ... See More ⇒

 7.1. Size:972K  samwin
sw7n70d swd7n70d swn7n70d swj7n70d swf7n70d.pdf pdf_icon

SWJ7N70K

SW7N70D N-channel Enhanced mode TO-252/TO-251N/TO-262N/TO-220F MOSFET Features TO-262N TO-220F TO-251N TO-252 BVDSS 700V High ruggedness ID 7A Low RDS(ON) (Typ 1.2 )@VGS=10V RDS(ON) 1.2 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 1 100% Avalanche Tested 2 1 1 1 2 2 3 2 2 Application LED, Charger, TV-Power 3... See More ⇒

 7.2. Size:1002K  samwin
swd7n70d swn7n70d swj7n70d swf7n70d.pdf pdf_icon

SWJ7N70K

SW7N70D N-channel Enhanced mode TO-252/TO-251N/TO-262N/TO-220F MOSFET Features TO-262N TO-220F TO-251N TO-252 BVDSS 700V High ruggedness ID 7A Low RDS(ON) (Typ 1.2 )@VGS=10V RDS(ON) 1.2 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 1 100% Avalanche Tested 2 1 1 1 2 2 3 2 2 Application LED, Charger, TV-Power 3... See More ⇒

 9.1. Size:1527K  samwin
swp7n65d swi7n65d swn7n65d swd7n65d swf7n65d swmn7n65d swj7n65d swha7n65d.pdf pdf_icon

SWJ7N70K

SW7N65D N-channel Enhanced mode TO-220/TO-251/TO-251N/TO-252/TO-220F/TO-220SF / TO-262N/DFN5*6 MOSFET Features TO-220 TO-251 TO-251N TO-252 BVDSS 650V High ruggedness ID 7A Low RDS(ON) (Typ 1.1 ) @VGS=10V RDS(ON) 1.1 1 1 1 1 2 2 Low Gate Charge (Typ 30nC) 2 2 3 3 3 3 Improved dv/dt Capability D DFN5*6 TO-220F TO-220SF TO-262N 100% Avalan... See More ⇒

Detailed specifications: SWI8N80K, SWJ10N65D, SWJ13N65K2, SWJ20N65K, SWJ4N80D, SWJ5N70K, SWJ6N90D, SWJ7N65DA, IRFP260, SWJ8N90KU, SWK028P04, SWK028P04VT, SWK083R06VLS, SWK083R06VS, SWK083R06VSM, SWK110R03VT, SWK110R06VT

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