FDS6898AZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDS6898AZ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 9.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.5 V
   Qgⓘ - Carga de la puerta: 16 nC
   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 440 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
   Paquete / Cubierta: SO-8

Búsqueda de reemplazo de MOSFET FDS6898AZ

FDS6898AZ Datasheet (PDF)

..1. Size:326K fairchild semi
fds6898az f085.pdf

February 2010tmFDS6898AZ_F085Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 9.4 A, 20 V RDS(ON) = 14 m @ VGS = 4.5 Vusing Fairchild Semiconductors advancedRDS(ON) = 18 m @ VGS = 2.5 VPowerTrench process that has been especially tailored Low gate charge (16 nC typica

..2. Size:77K fairchild semi
fds6898az.pdf

October 2001FDS6898AZDual N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 9.4 A, 20 V RDS(ON) = 14 m @ VGS = 4.5 Vusing Fairchild Semiconductors advancedRDS(ON) = 18 m @ VGS = 2.5 VPowerTrench process that has been especially tailored Low gate charge (16 nC typical)to min

..3. Size:191K onsemi
fds6898az.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

0.1. Size:346K onsemi
fds6898az-f085.pdf

FDS6898AZ-F085Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral DescriptionFeaturesThese N-Channel Logic Level MOSFETs are produced 9.4 A, 20 V RDS(ON) = 14 m @ VGS = 4.5 Vusing ON Semiconductors advanced RDS(ON) = 18 m @ VGS = 2.5 VPowerTrench process that has been especially tailored Low gate charge (16 nC typical)to minimize the on-s

6.1. Size:81K fairchild semi
fds6898a.pdf

OCTOBER 2001FDS6898ADual N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 9.4 A, 20 V RDS(ON) = 14 m @ VGS = 4.5 Vusing Fairchild Semiconductors advancedRDS(ON) = 18 m @ VGS = 2.5 VPowerTrench process that has been especially tailored Low gate charge (16 nC typical)to mini

8.1. Size:82K fairchild semi
fds6894a.pdf

October 2001FDS6894ADual N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 8 A, 20 V. RDS(ON) = 17 m @ VGS = 4.5 Vusing Fairchild Semiconductors advancedRDS(ON) = 20 m @ VGS = 2.5 VPowerTrench process that has been especially tailoredRDS(ON) = 30 m @ VGS = 1.8 Vto minimize

8.2. Size:80K fairchild semi
fds6892a.pdf

October 2001FDS6892ADual N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 7.5 A, 20 V. RDS(ON) = 18 m @ VGS = 4.5 Vusing Fairchild Semiconductors advancedRDS(ON) = 24 m @ VGS = 2.5 VPowerTrench process that has been especially tailored Low gate charge (12 nC)to minimize th

8.3. Size:77K fairchild semi
fds6894az.pdf

October 2001FDS6894AZDual N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 8 A, 20 V. RDS(ON) = 17 m @ VGS = 4.5 Vusing Fairchild Semiconductors advancedRDS(ON) = 20 m @ VGS = 2.5 VPowerTrench process that has been especially tailoredRDS(ON) = 30 m @ VGS = 1.8 Vto minimize

8.4. Size:109K fairchild semi
fds6890a.pdf

November 1999FDS6890ADual N-Channel 2.5V Specified PowerTrenchTM MOSFETGeneral DescriptionFeaturesThese N-Channel 2.5V specified MOSFETs are 7.5 A, 20 V. RDS(ON) = 0.018 @ VGS = 4.5 Vproduced using Fairchild Semiconductor's advanced RDS(ON) = 0.022 @ VGS = 2.5 V.PowerTrench process that has been especially tailoredto minimize the on-state resistance and yet mainta

8.5. Size:193K onsemi
fds6892a.pdf

8.6. Size:1462K cn vbsemi
fds6890a.pdf

FDS6890Awww.VBsemi.twDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET200.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8 D1 D2S1 1 D18G1 2 D17S2 3 D26G1 G2G2 4 D2

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