February 2010tmFDS6898AZ_F085Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 9.4 A, 20 V RDS(ON) = 14 m @ VGS = 4.5 Vusing Fairchild Semiconductors advancedRDS(ON) = 18 m @ VGS = 2.5 VPowerTrench process that has been especially tailored Low gate charge (16 nC typica

October 2001FDS6898AZDual N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 9.4 A, 20 V RDS(ON) = 14 m @ VGS = 4.5 Vusing Fairchild Semiconductors advancedRDS(ON) = 18 m @ VGS = 2.5 VPowerTrench process that has been especially tailored Low gate charge (16 nC typical)to min

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDS6898AZ-F085Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral DescriptionFeaturesThese N-Channel Logic Level MOSFETs are produced 9.4 A, 20 V RDS(ON) = 14 m @ VGS = 4.5 Vusing ON Semiconductors advanced RDS(ON) = 18 m @ VGS = 2.5 VPowerTrench process that has been especially tailored Low gate charge (16 nC typical)to minimize the on-s

OCTOBER 2001FDS6898ADual N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 9.4 A, 20 V RDS(ON) = 14 m @ VGS = 4.5 Vusing Fairchild Semiconductors advancedRDS(ON) = 18 m @ VGS = 2.5 VPowerTrench process that has been especially tailored Low gate charge (16 nC typical)to mini

October 2001FDS6894ADual N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 8 A, 20 V. RDS(ON) = 17 m @ VGS = 4.5 Vusing Fairchild Semiconductors advancedRDS(ON) = 20 m @ VGS = 2.5 VPowerTrench process that has been especially tailoredRDS(ON) = 30 m @ VGS = 1.8 Vto minimize

October 2001FDS6892ADual N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 7.5 A, 20 V. RDS(ON) = 18 m @ VGS = 4.5 Vusing Fairchild Semiconductors advancedRDS(ON) = 24 m @ VGS = 2.5 VPowerTrench process that has been especially tailored Low gate charge (12 nC)to minimize th

October 2001FDS6894AZDual N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 8 A, 20 V. RDS(ON) = 17 m @ VGS = 4.5 Vusing Fairchild Semiconductors advancedRDS(ON) = 20 m @ VGS = 2.5 VPowerTrench process that has been especially tailoredRDS(ON) = 30 m @ VGS = 1.8 Vto minimize

November 1999FDS6890ADual N-Channel 2.5V Specified PowerTrenchTM MOSFETGeneral DescriptionFeaturesThese N-Channel 2.5V specified MOSFETs are 7.5 A, 20 V. RDS(ON) = 0.018 @ VGS = 4.5 Vproduced using Fairchild Semiconductor's advanced RDS(ON) = 0.022 @ VGS = 2.5 V.PowerTrench process that has been especially tailoredto minimize the on-state resistance and yet mainta

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDS6890Awww.VBsemi.twDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET200.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8 D1 D2S1 1 D18G1 2 D17S2 3 D26G1 G2G2 4 D2