FDS6910 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDS6910
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 17 nC
   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 300 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
   Paquete / Cubierta: SO-8

Búsqueda de reemplazo de MOSFET FDS6910

FDS6910 Datasheet (PDF)

..1. Size:112K fairchild semi
fds6910.pdf

September 2004 FDS6910 Dual N-Channel Logic Level PowerTrench MOSFETGeneral Description Features These N-Channel Logic Level MOSFETs are produced 7.5 A, 30 V. RDS(ON) = 13 m @ VGS = 10 V using Fairchild Semiconductors advancedRDS(ON) = 17 m @ VGS = 4.5 VPowerTrench process that has been especially tailored to minimize the on-state resistance and

..2. Size:172K onsemi
fds6910.pdf

FDS6910 Dual N-Channel Logic Level PowerTrench MOSFETFeatures General Description 7.5 A, 30 V. RDS(ON) = 13 m @ VGS = 10 V RDS(ON) = 17 m @ VGS = 4.5 VThese N-Channel Logic Level MOSFETs are produced Fast switching speedusing ON Semiconductors advancedPowerTrench process that has been especially tailored Low gate chargeto minimize the o

8.1. Size:75K fairchild semi
fds6912.pdf

July 2000FDS6912Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs have been 6 A, 30 V. RDS(ON) = 0.028 @ VGS = 10 Vdesigned specifically to improve the overall efficiency ofRDS(ON) = 0.042 @ VGS = 4.5 V.DC/DC converters using either synchronous or Optimized for use in switc

8.2. Size:120K fairchild semi
fds6912a.pdf

July 2003FDS6912ADual N-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 6 A, 30 V. RDS(ON) = 28 m @ VGS = 10 Vusing Fairchild Semiconductors advancedRDS(ON) = 35 m @ VGS = 4.5 VPowerTrench process that has been especially tailoredto minimize the on-state resistance and yet maintain Fast switchi

8.3. Size:110K fairchild semi
fds6911.pdf

March 2006 FDS6911 Dual N-Channel Logic Level PowerTrench MOSFET 20V, 7.5A, 13m General Description Features These N-Channel Logic Level MOSFETs are produced rDS(on) = 13 m @ VGS = 10 V using Fairchild Semiconductors advancedrDS(on) = 17 m @ VGS = 4.5 V PowerTrench process that has been especially tailored Fast switching speed to minimize the on-state resist

8.4. Size:182K onsemi
fds6912a.pdf

FDS6912ADual N-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 6 A, 30 V. RDS(ON) = 28 m @ VGS = 10 Vusing ON Semiconductors advanced RDS(ON) = 35 m @ VGS = 4.5 VPowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain Fast switching speedsupe

8.5. Size:302K onsemi
fds6911.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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