FDS6910 Todos los transistores

 

FDS6910 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDS6910
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 300 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
   Paquete / Cubierta: SO-8
     - Selección de transistores por parámetros

 

FDS6910 Datasheet (PDF)

 ..1. Size:112K  fairchild semi
fds6910.pdf pdf_icon

FDS6910

September 2004 FDS6910 Dual N-Channel Logic Level PowerTrench MOSFETGeneral Description Features These N-Channel Logic Level MOSFETs are produced 7.5 A, 30 V. RDS(ON) = 13 m @ VGS = 10 V using Fairchild Semiconductors advancedRDS(ON) = 17 m @ VGS = 4.5 VPowerTrench process that has been especially tailored to minimize the on-state resistance and

 ..2. Size:172K  onsemi
fds6910.pdf pdf_icon

FDS6910

FDS6910 Dual N-Channel Logic Level PowerTrench MOSFETFeatures General Description 7.5 A, 30 V. RDS(ON) = 13 m @ VGS = 10 V RDS(ON) = 17 m @ VGS = 4.5 VThese N-Channel Logic Level MOSFETs are produced Fast switching speedusing ON Semiconductors advancedPowerTrench process that has been especially tailored Low gate chargeto minimize the o

 8.1. Size:75K  fairchild semi
fds6912.pdf pdf_icon

FDS6910

July 2000FDS6912Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs have been 6 A, 30 V. RDS(ON) = 0.028 @ VGS = 10 Vdesigned specifically to improve the overall efficiency ofRDS(ON) = 0.042 @ VGS = 4.5 V.DC/DC converters using either synchronous or Optimized for use in switc

 8.2. Size:120K  fairchild semi
fds6912a.pdf pdf_icon

FDS6910

July 2003FDS6912ADual N-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 6 A, 30 V. RDS(ON) = 28 m @ VGS = 10 Vusing Fairchild Semiconductors advancedRDS(ON) = 35 m @ VGS = 4.5 VPowerTrench process that has been especially tailoredto minimize the on-state resistance and yet maintain Fast switchi

Otros transistores... FDS6699S , SP8611 , FDS6892A , FDS6898A , FDS6898AZ , FDS6898AZF085 , FDS6900AS , SP8608 , IRF630 , SP8601 , FDS6911 , FDS6930B , SP8256 , FDS6982AS , SP8255 , FDS6984AS , SP8076EL .

History: HY1908P | ET6309 | FDP26N40 | IRF8852 | AP2312GN | APT8024LVFRG | AP2622GY

 

 
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