FDS6910 Datasheet. Specs and Replacement

Type Designator: FDS6910  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: SO-8

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FDS6910 datasheet

 ..1. Size:112K  fairchild semi
fds6910.pdf pdf_icon

FDS6910

September 2004 FDS6910 Dual N-Channel Logic Level PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 7.5 A, 30 V. RDS(ON) = 13 m @ VGS = 10 V using Fairchild Semiconductor s advanced RDS(ON) = 17 m @ VGS = 4.5 V PowerTrench process that has been especially tailored to minimize the on-state resistance and... See More ⇒

 ..2. Size:172K  onsemi
fds6910.pdf pdf_icon

FDS6910

FDS6910 Dual N-Channel Logic Level PowerTrench MOSFET Features General Description 7.5 A, 30 V. RDS(ON) = 13 m @ VGS = 10 V RDS(ON) = 17 m @ VGS = 4.5 V These N-Channel Logic Level MOSFETs are produced Fast switching speed using ON Semiconductor s advanced PowerTrench process that has been especially tailored Low gate charge to minimize the o... See More ⇒

 8.1. Size:75K  fairchild semi
fds6912.pdf pdf_icon

FDS6910

July 2000 FDS6912 Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs have been 6 A, 30 V. RDS(ON) = 0.028 @ VGS = 10 V designed specifically to improve the overall efficiency of RDS(ON) = 0.042 @ VGS = 4.5 V. DC/DC converters using either synchronous or Optimized for use in switc... See More ⇒

 8.2. Size:120K  fairchild semi
fds6912a.pdf pdf_icon

FDS6910

July 2003 FDS6912A Dual N-Channel Logic Level PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 6 A, 30 V. RDS(ON) = 28 m @ VGS = 10 V using Fairchild Semiconductor s advanced RDS(ON) = 35 m @ VGS = 4.5 V PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain Fast switchi... See More ⇒

Detailed specifications: FDS6699S, SP8611, FDS6892A, FDS6898A, FDS6898AZ, FDS6898AZF085, FDS6900AS, SP8608, 8205A, SP8601, FDS6911, FDS6930B, SP8256, FDS6982AS, SP8255, FDS6984AS, SP8076EL

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