All MOSFET. FDS6910 Datasheet

 

FDS6910 Datasheet and Replacement


   Type Designator: FDS6910
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 17 nC
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: SO-8
 

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FDS6910 Datasheet (PDF)

 ..1. Size:112K  fairchild semi
fds6910.pdf pdf_icon

FDS6910

September 2004 FDS6910 Dual N-Channel Logic Level PowerTrench MOSFETGeneral Description Features These N-Channel Logic Level MOSFETs are produced 7.5 A, 30 V. RDS(ON) = 13 m @ VGS = 10 V using Fairchild Semiconductors advancedRDS(ON) = 17 m @ VGS = 4.5 VPowerTrench process that has been especially tailored to minimize the on-state resistance and

 ..2. Size:172K  onsemi
fds6910.pdf pdf_icon

FDS6910

FDS6910 Dual N-Channel Logic Level PowerTrench MOSFETFeatures General Description 7.5 A, 30 V. RDS(ON) = 13 m @ VGS = 10 V RDS(ON) = 17 m @ VGS = 4.5 VThese N-Channel Logic Level MOSFETs are produced Fast switching speedusing ON Semiconductors advancedPowerTrench process that has been especially tailored Low gate chargeto minimize the o

 8.1. Size:75K  fairchild semi
fds6912.pdf pdf_icon

FDS6910

July 2000FDS6912Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs have been 6 A, 30 V. RDS(ON) = 0.028 @ VGS = 10 Vdesigned specifically to improve the overall efficiency ofRDS(ON) = 0.042 @ VGS = 4.5 V.DC/DC converters using either synchronous or Optimized for use in switc

 8.2. Size:120K  fairchild semi
fds6912a.pdf pdf_icon

FDS6910

July 2003FDS6912ADual N-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 6 A, 30 V. RDS(ON) = 28 m @ VGS = 10 Vusing Fairchild Semiconductors advancedRDS(ON) = 35 m @ VGS = 4.5 VPowerTrench process that has been especially tailoredto minimize the on-state resistance and yet maintain Fast switchi

Datasheet: FDS6699S , SP8611 , FDS6892A , FDS6898A , FDS6898AZ , FDS6898AZF085 , FDS6900AS , SP8608 , IRF630 , SP8601 , FDS6911 , FDS6930B , SP8256 , FDS6982AS , SP8255 , FDS6984AS , SP8076EL .

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