SWP046R08E9T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SWP046R08E9T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 245 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 160 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 75 nS

Cossⓘ - Capacitancia de salida: 625 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0059 Ohm

Encapsulados: TO220

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SWP046R08E9T datasheet

 ..1. Size:741K  samwin
 swp046r08e9t swb046r08e9t.pdf pdf_icon

SWP046R08E9T

SW046R08E9T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 80V High ruggedness Low RDS(ON) (Typ 4.5m )@VGS=10V ID 160A Low Gate Charge (Typ 182nC) RDS(ON) 4.5m Improved dv/dt Capability 100% Avalanche Tested 2 Application Synchronous Rectification, 1 1 2 2 Li Battery Protect Board, Inverter 3 3 1 1. Gate 2.Drain 3.

 4.1. Size:737K  samwin
 swp046r08e8t swb046r08e8t.pdf pdf_icon

SWP046R08E9T

SW046R08E8T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 80V High ruggedness ID 150A Low RDS(ON) (Typ 4.8m )@VGS=10V RDS(ON) 4.8m Low Gate Charge (Typ 183nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application Synchronous Rectification, 3 3 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3

 7.1. Size:800K  samwin
 swp046r68e8t swb046r68e8t.pdf pdf_icon

SWP046R08E9T

SW046R68E8T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 68V High ruggedness Low RDS(ON) (Typ 4.6m )@VGS=10V ID 145A Low Gate Charge (Typ 145nC) RDS(ON) 4.6m Improved dv/dt Capability 100% Avalanche Tested 2 1 Application Synchronous Rectification, 2 1 2 3 Li Battery Protect Board, Inverter 3 1 1. Gate 2.Drain

 9.1. Size:729K  samwin
 swp042r10es swb042r10es.pdf pdf_icon

SWP046R08E9T

SW042R10ES N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 100V ID 120A High ruggedness Low RDS(ON) (Typ 4.4m )@VGS=10V RDS(ON) 4.4m Low Gate Charge (Typ 106nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 2 1 2 3 Application Synchronous Rectification, 3 Li Battery Protect Board, In

MOSTRAR MÁS

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