SWP058R65E7T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SWP058R65E7T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 176 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 65 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 55 nS

Cossⓘ - Capacitancia de salida: 364 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm

Encapsulados: TO220

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SWP058R65E7T datasheet

 ..1. Size:813K  samwin
 swp058r65e7t swb058r65e7t.pdf pdf_icon

SWP058R65E7T

SW058R65E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 65V High ruggedness Low RDS(ON) (Typ 6.1m )@VGS=10V ID 100A Low Gate Charge (Typ 104nC) RDS(ON) 6.1m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.

 7.1. Size:820K  samwin
 swp058r75e7t.pdf pdf_icon

SWP058R65E7T

SW058R75E7T N-channel Enhanced mode TO-220 MOSFET Features TO-220 BVDSS 75V High ruggedness ID 100A Low RDS(ON) (Typ 6.3m )@VGS=10V Low Gate Charge (Typ 107nC) RDS(ON) 6.3m Improved dv/dt Capability 100% Avalanche Tested 2 1 Application Synchronous Rectification, 2 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.Source General Des

 7.2. Size:823K  samwin
 swp058r72e7t.pdf pdf_icon

SWP058R65E7T

SW058R72E7T N-channel Enhanced mode TO-220 MOSFET Features TO-220 BVDSS 72V High ruggedness ID 100A Low RDS(ON) (Typ 6.3m )@VGS=10V Low Gate Charge (Typ 107nC) RDS(ON) 6.3m Improved dv/dt Capability 100% Avalanche Tested 2 1 Application Synchronous Rectification, 2 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.Source General Des

 7.3. Size:833K  samwin
 swp058r06e7t swb058r06e7t.pdf pdf_icon

SWP058R65E7T

SW058R06E7T N-channel Enhanced mode TO-220/TO-263 MOSFET TO-220 TO-263 Features BVDSS 60V ID 120A High ruggedness Low RDS(ON) (Typ 5.8m )@VGS=10V RDS(ON) 5.8m Low Gate Charge (Typ 102nC) Improved dv/dt Capability 2 1 1 2 2 100% Avalanche Tested 3 3 Application Telecom, Computer, Inverter 1 1. Gate 2. Drain 3. Source 3 General Description

MOSTRAR MÁS

Otros transistores... SWP046R08E9T, SWP046R68E8T, SWP050R68E8T, SWP050R95E8S, SWP051R08ES, SWP055R68E7T, SWP056R68E7T, SWP058R06E7T, IRFP260N, SWP058R72E7T, SWP058R75E7T, SWP060R65E7T, SWP060R68E7T, SWP062R08E8T, SWP062R68E7T, SWP065R68E7T, SWP066R68E7T