All MOSFET. SWP058R65E7T Datasheet

 

SWP058R65E7T MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWP058R65E7T
   Marking Code: SW058R65E7T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 176 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 104 nC
   trⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 364 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO220

 SWP058R65E7T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWP058R65E7T Datasheet (PDF)

 ..1. Size:813K  samwin
 swp058r65e7t swb058r65e7t.pdf

SWP058R65E7T SWP058R65E7T

SW058R65E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 65V High ruggedness Low RDS(ON) (Typ 6.1m)@VGS=10V ID : 100A Low Gate Charge (Typ 104nC)RDS(ON) : 6.1m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.

 7.1. Size:820K  samwin
 swp058r75e7t.pdf

SWP058R65E7T SWP058R65E7T

SW058R75E7TN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 75V High ruggednessID : 100A Low RDS(ON) (Typ 6.3m)@VGS=10V Low Gate Charge (Typ 107nC)RDS(ON) : 6.3m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Inverter11. Gate 2.Drain 3.SourceGeneral Des

 7.2. Size:823K  samwin
 swp058r72e7t.pdf

SWP058R65E7T SWP058R65E7T

SW058R72E7TN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 72V High ruggednessID : 100A Low RDS(ON) (Typ 6.3m)@VGS=10V Low Gate Charge (Typ 107nC)RDS(ON) : 6.3m Improved dv/dt Capability 100% Avalanche Tested21 Application:Synchronous Rectification,23Li Battery Protect Board, Inverter11. Gate 2.Drain 3.SourceGeneral Des

 7.3. Size:833K  samwin
 swp058r06e7t swb058r06e7t.pdf

SWP058R65E7T SWP058R65E7T

SW058R06E7TN-channel Enhanced mode TO-220/TO-263 MOSFETTO-220 TO-263FeaturesBVDSS : 60VID : 120A High ruggedness Low RDS(ON) (Typ 5.8m)@VGS=10VRDS(ON) : 5.8m Low Gate Charge (Typ 102nC) Improved dv/dt Capability 21 12 2 100% Avalanche Tested3 3 Application:Telecom, Computer, Inverter11. Gate 2. Drain 3. Source3General Description

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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