SWP068R08ET MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SWP068R08ET
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 242
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 80
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 120
A
Tjⓘ - Temperatura máxima de unión: 175
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 79
nS
Cossⓘ - Capacitancia
de salida: 401
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009
Ohm
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de SWP068R08ET MOSFET
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SWP068R08ET datasheet
..1. Size:853K samwin
swp068r08et swb068r08et.pdf 
SW068R08ET N-channel Enhanced mode TO-220/TO-263 MOSFET Features BVDSS 80V TO-220 TO-263 High ruggedness ID 120A Low RDS(ON) (Typ 7.1m )@VGS=10V RDS(ON) 7.1m Low Gate Charge (Typ 59nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 2 2 3 Application Synchronous Rectification, 1 3 Li Battery Protect Board, Inverter 1. Gate 2. Drain
4.1. Size:782K samwin
swp068r08e8t.pdf
SW068R08E8T N-channel Enhanced mode TO-220 MOSFET Features TO-220 BVDSS 80V High ruggedness ID 106A Low RDS(ON) (Typ 6.7m )@VGS=10V Low Gate Charge (Typ 130nC) RDS(ON) 6.7m Improved dv/dt Capability 100% Avalanche Tested 2 1 Application Synchronous Rectification, 2 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.Source General Des
7.1. Size:775K samwin
swp068r68e7t swb068r68e7t.pdf
SW068R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 68V High ruggedness ID 90A Low RDS(ON) (Typ 6.8m )@VGS=10V Low Gate Charge (Typ 78nC) RDS(ON) 6.8m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.So
9.1. Size:784K samwin
swha069r10vs swi069r10vs swd069r10vs swp069r10vs swu069r10vs.pdf
SW069R10VS N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220/TO-262 MOSFET Features TO-252 TO-220 TO-262 DFN5*6 TO-251 BVDSS 100V High ruggedness Low RDS(ON) (Typ 9.0m )@VGS=4.5V ID 70A 1 8 Low RDS(ON) (Typ 7.1m )@VGS=10V 2 7 6 3 RDS(ON) 9.0m @VGS=4.5V Low Gate Charge (Typ 45nC) 4 5 Improved dv/dt Capability 7.1m @VGS=10V
9.2. Size:835K samwin
swp066r72e7t.pdf
SW066R72E7T N-channel Enhanced mode TO-220 MOSFET Features TO-220 BVDSS 72V High ruggedness ID 100A Low RDS(ON) (Typ 6.9m )@VGS=10V Low Gate Charge (Typ 89nC) RDS(ON) 6.9m Improved dv/dt Capability 100% Avalanche Tested 2 1 Application Synchronous Rectification, 2 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.Source General Descr
9.3. Size:821K samwin
swp066r68e7t.pdf
SW066R68E7T N-channel Enhanced mode TO-220 MOSFET Features TO-220 BVDSS 68V High ruggedness ID 100A Low RDS(ON) (Typ 6.9m )@VGS=10V Low Gate Charge (Typ 85nC) RDS(ON) 6.9m Improved dv/dt Capability 100% Avalanche Tested 2 1 Application Synchronous Rectification, 2 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.Source General Descr
9.4. Size:768K samwin
swp065r68e7t swb065r68e7t.pdf
SW065R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 68V High ruggedness Low RDS(ON) (Typ 6.3m )@VGS=10V ID 100A Low Gate Charge (Typ 75nC) RDS(ON) 6.3m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1
9.5. Size:772K samwin
swp062r68e7t swb062r68e7t.pdf
SW062R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 68V High ruggedness ID 100A Low RDS(ON) (Typ 6.2m )@VGS=10V Low Gate Charge (Typ 85nC) RDS(ON) 6.2m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.S
9.6. Size:813K samwin
swp060r65e7t swb060r65e7t.pdf
SW060R65E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 65V High ruggedness Low RDS(ON) (Typ 5.6m )@VGS=10V ID 110A Low Gate Charge (Typ 94nC) RDS(ON) 5.6m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.S
9.7. Size:816K samwin
swp060r68e7t swb060r68e7t.pdf
SW060R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 68V High ruggedness Low RDS(ON) (Typ 5.6m )@VGS=10V ID 110A Low Gate Charge (Typ 94nC) RDS(ON) 5.6m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.S
9.8. Size:570K samwin
swp069r06vt.pdf
SW069R06VT N-channel Enhanced mode TO-220 MOSFET Features TO-220 BVDSS 60V High ruggedness ID 120A Low RDS(ON) (Typ 6.8m )@VGS=4.5V (Typ 5.6m )@VGS=10V RDS(ON) 6.8m @VGS=4.5V Low Gate Charge (Typ 80nC) 1 Improved dv/dt Capability 5.6m @VGS=10V 2 100% Avalanche Tested 3 D Application Synchronous Rectification, Li Batter
9.9. Size:708K samwin
swha069r10vs swi069r10vs swd069r10vs swp069r10vs.pdf
SW069R10VS N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220 MOSFET Features DFN5*6 TO-251 TO-252 TO-220 BVDSS 100V High ruggedness ID 70A Low RDS(ON) (Typ 7.1m )@VGS=10V RDS(ON) 7.1m @VGS=10V Low Gate Charge (Typ 45nC) Improved dv/dt Capability 9.0m @VGS=4.5V 1 100% Avalanche Tested G(4) 1 1 D(5,6,7,8) 2 2 2 3 3 3 A
9.10. Size:804K samwin
swp062r08e8t swb062r08e8t.pdf
SW062R08E8T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 80V High ruggedness ID 125A Low RDS(ON) (Typ 5.9m )@VGS=10V RDS(ON) 5.9m Low Gate Charge (Typ 137nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application Synchronous Rectification, 3 3 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3
9.11. Size:772K cn super semi
swp062r68e7t swb062r68e7t.pdf
SW062R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 68V High ruggedness ID 100A Low RDS(ON) (Typ 6.2m )@VGS=10V Low Gate Charge (Typ 85nC) RDS(ON) 6.2m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.S
Otros transistores... SWP060R65E7T
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History: FQP4N20
