SWP078R08ET Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SWP078R08ET

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 144 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 51 nS

Cossⓘ - Capacitancia de salida: 314 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0097 Ohm

Encapsulados: TO220

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SWP078R08ET datasheet

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 swb078r08et swp078r08et.pdf pdf_icon

SWP078R08ET

SW078R08ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features BVDSS 80V TO-263 TO-220 High ruggedness ID 60A Low RDS(ON) (Typ 7.8m )@VGS=10V RDS(ON) 7.8m Low Gate Charge (Typ 79nC) Improved dv/dt Capability 1 2 100% Avalanche Tested 1 2 3 2 Application Telecom, Computer,Inverter 3 1 1. Gate 2. Drain 3. Source 3 Ge

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 swp078r08e8t.pdf pdf_icon

SWP078R08ET

SW078R08E8T N-channel Enhanced mode TO-220 MOSFET Features TO-220 BVDSS 80V High ruggedness ID 95A Low RDS(ON) (Typ 8.4m )@VGS=10V RDS(ON) 8.4m Low Gate Charge (Typ 98nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application Synchronous Rectification, 3 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3.Source General Descr

 9.1. Size:751K  samwin
 swp076r68e7t swb076r68e7t.pdf pdf_icon

SWP078R08ET

SW076R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 68V High ruggedness ID 85A Low RDS(ON) (Typ 7.6m )@VGS=10V Low Gate Charge (Typ 70nC) RDS(ON) 7.6m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.S

 9.2. Size:1029K  samwin
 swb072r08et swp072r08et.pdf pdf_icon

SWP078R08ET

SW072R08ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS 80V High ruggedness ID 100A Low RDS(ON) (Typ 6.6m )@VGS=10V RDS(ON) 6.6m Low Gate Charge (Typ 60nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Inverter, Li Battery Protect Board 1 1. Gate 2. Drain 3. So

MOSTRAR MÁS

Otros transistores... SWP070R08E7T, SWP072R06ET, SWP072R08ET, SWP072R68E7T, SWP072R72E7T, SWP075R08E7T, SWP076R68E7T, SWP078R08E8T, K3569, SWP085R06V7T, SWP085R06VT, SWP085R68E7T, SWP086R68E7T, SWP088R06VT, SWP088R08E8T, SWP090R08ET, SWP100N10A