All MOSFET. SWP078R08ET Datasheet

 

SWP078R08ET Datasheet and Replacement


   Type Designator: SWP078R08ET
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 144 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 51 nS
   Cossⓘ - Output Capacitance: 314 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0097 Ohm
   Package: TO220
 

 SWP078R08ET substitution

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SWP078R08ET Datasheet (PDF)

 ..1. Size:1051K  samwin
 swb078r08et swp078r08et.pdf pdf_icon

SWP078R08ET

SW078R08ET N-channel Enhanced mode TO-263/TO-220 MOSFET Features BVDSS :80V TO-263 TO-220 High ruggedness ID :60A Low RDS(ON) (Typ 7.8m)@VGS=10V RDS(ON) : 7.8m Low Gate Charge (Typ 79nC) Improved dv/dt Capability 1 2 100% Avalanche Tested 1 2 3 2 Application:Telecom, Computer,Inverter 3 1 1. Gate 2. Drain 3. Source 3 Ge

 4.1. Size:754K  samwin
 swp078r08e8t.pdf pdf_icon

SWP078R08ET

SW078R08E8TN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 80V High ruggednessID : 95A Low RDS(ON) (Typ 8.4m)@VGS=10VRDS(ON) : 8.4m Low Gate Charge (Typ 98nC) Improved dv/dt Capability 2 100% Avalanche Tested12 Application:Synchronous Rectification,31Li Battery Protect Board, Inverter1. Gate 2.Drain 3.SourceGeneral Descr

 9.1. Size:751K  samwin
 swp076r68e7t swb076r68e7t.pdf pdf_icon

SWP078R08ET

SW076R68E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 68V High ruggednessID : 85A Low RDS(ON) (Typ 7.6m)@VGS=10V Low Gate Charge (Typ 70nC)RDS(ON) : 7.6m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.S

 9.2. Size:1029K  samwin
 swb072r08et swp072r08et.pdf pdf_icon

SWP078R08ET

SW072R08ETN-channel Enhanced mode TO-263/TO-220 MOSFETFeaturesTO-263 TO-220 BVDSS : 80V High ruggednessID : 100A Low RDS(ON) (Typ 6.6m)@VGS=10VRDS(ON) : 6.6m Low Gate Charge (Typ 60nC) Improved dv/dt Capability 100% Avalanche Tested 21 1 Application:Synchronous Rectification, 2 23 3Inverter, Li Battery Protect Board11. Gate 2. Drain 3. So

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Datasheet: SWP070R08E7T , SWP072R06ET , SWP072R08ET , SWP072R68E7T , SWP072R72E7T , SWP075R08E7T , SWP076R68E7T , SWP078R08E8T , SPP20N60C3 , SWP085R06V7T , SWP085R06VT , SWP085R68E7T , SWP086R68E7T , SWP088R06VT , SWP088R08E8T , SWP090R08ET , SWP100N10A .

History: SM4301PSK | NX3008PBKV | APT94N65LC6 | P8503BMA | SUM110N04-2M3L | SM2F04NSU | AP73T03AGMT-HF

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