SWP085R06V7T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SWP085R06V7T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 117.9 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 45 nS

Cossⓘ - Capacitancia de salida: 189 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0098 Ohm

Encapsulados: TO220

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SWP085R06V7T datasheet

 ..1. Size:813K  samwin
 swp085r06v7t.pdf pdf_icon

SWP085R06V7T

SW085R06V7T N-channel Enhanced mode TO-220 MOSFET Features TO-220 BVDSS 60V High ruggedness ID 80A Low RDS(ON) (Typ 10.5m )@VGS=4.5V (Typ 8.3m )@VGS=10V RDS(ON) 10.5m @VGS=4.5V Low Gate Charge (Typ 66nC) 8.3m @VGS=10V 1 Improved dv/dt Capability 2 3 100% Avalanche Tested 2 Application Synchronous Rectification, 1. Gate 2.Drain 3.Source

 4.1. Size:662K  samwin
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SWP085R06V7T

SW085R06VT N-channel Enhanced mode TO-220 MOSFET Features TO-220 BVDSS 60V High ruggedness ID 50A Low RDS(ON) (Typ 8.0m )@VGS=4.5V (Typ 7.3m )@VGS=10V RDS(ON) 8.0m @VGS=4.5V Low Gate Charge (Typ 87nC) 7.3m @VGS=10V Improved dv/dt Capability 1 100% Avalanche Tested 2 2 3 Application Electronic Ballast , Motor Cont

 7.1. Size:755K  samwin
 swb085r68e7t swp085r68e7t.pdf pdf_icon

SWP085R06V7T

SW085R68E7T N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS 68V High ruggedness ID 75A Low RDS(ON) (Typ 9.5m )@VGS=10V RDS(ON) 9.5m Low Gate Charge (Typ 47nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application Synchronous Rectification, 3 3 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3.S

 9.1. Size:742K  samwin
 swp088r08e8t swb088r08e8t.pdf pdf_icon

SWP085R06V7T

SW088R08E8T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 80V High ruggedness ID 80A Low RDS(ON) (Typ 9.4m )@VGS=10V RDS(ON) 9.4m Low Gate Charge (Typ 89nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application Synchronous Rectification, 3 3 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3.S

MOSTRAR MÁS

Otros transistores... SWP072R06ET, SWP072R08ET, SWP072R68E7T, SWP072R72E7T, SWP075R08E7T, SWP076R68E7T, SWP078R08E8T, SWP078R08ET, IRFP260, SWP085R06VT, SWP085R68E7T, SWP086R68E7T, SWP088R06VT, SWP088R08E8T, SWP090R08ET, SWP100N10A, SWP100N10B