SWP086R68E7T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SWP086R68E7T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 116 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 68 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 58 nS

Cossⓘ - Capacitancia de salida: 174 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0108 Ohm

Encapsulados: TO220

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SWP086R68E7T datasheet

 ..1. Size:831K  samwin
 swp086r68e7t swb086r68e7t.pdf pdf_icon

SWP086R68E7T

SW086R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 68V High ruggedness ID 75A Low RDS(ON) (Typ 9.2m )@VGS=10V Low Gate Charge (Typ 64nC) RDS(ON) 9.2m Improved dv/dt Capability 100% Avalanche Tested 2 1 1 Application Synchronous Rectification, 2 2 3 3 Li Battery Protect Board, Inverter 1 1. Gate 2.Drain 3.So

 9.1. Size:742K  samwin
 swp088r08e8t swb088r08e8t.pdf pdf_icon

SWP086R68E7T

SW088R08E8T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 80V High ruggedness ID 80A Low RDS(ON) (Typ 9.4m )@VGS=10V RDS(ON) 9.4m Low Gate Charge (Typ 89nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application Synchronous Rectification, 3 3 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3.S

 9.2. Size:688K  samwin
 swp088r06vt swb088r06vt.pdf pdf_icon

SWP086R68E7T

SW088R06VT N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 60V High ruggedness ID 100A Low RDS(ON) (Typ 10m )@VGS=4.5V (Typ 8.2m )@VGS=10V RDS(ON) 10m @VGS=4.5V Low Gate Charge (Typ 48nC) 8.2m @VGS=10V Improved dv/dt Capability 100% Avalanche Tested 1 1 2 2 2 3 3 Application Electronic Ballast, Motor Control Sync

 9.3. Size:813K  samwin
 swp085r06v7t.pdf pdf_icon

SWP086R68E7T

SW085R06V7T N-channel Enhanced mode TO-220 MOSFET Features TO-220 BVDSS 60V High ruggedness ID 80A Low RDS(ON) (Typ 10.5m )@VGS=4.5V (Typ 8.3m )@VGS=10V RDS(ON) 10.5m @VGS=4.5V Low Gate Charge (Typ 66nC) 8.3m @VGS=10V 1 Improved dv/dt Capability 2 3 100% Avalanche Tested 2 Application Synchronous Rectification, 1. Gate 2.Drain 3.Source

MOSTRAR MÁS

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