SWP086R68E7T Datasheet and Replacement

SW086R68E7TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 68V High ruggednessID : 75A Low RDS(ON) (Typ 9.2m)@VGS=10V Low Gate Charge (Typ 64nC)RDS(ON) :9.2m Improved dv/dt Capability 100% Avalanche Tested21 1 Application:Synchronous Rectification,2 23 3Li Battery Protect Board, Inverter11. Gate 2.Drain 3.So

SW088R08E8TN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263BVDSS : 80V High ruggednessID : 80A Low RDS(ON) (Typ 9.4m)@VGS=10VRDS(ON) : 9.4m Low Gate Charge (Typ 89nC) Improved dv/dt Capability 2 100% Avalanche Tested1 12 2 Application:Synchronous Rectification,3 31Li Battery Protect Board, Inverter1. Gate 2.Drain 3.S

SW088R06VTN-channel Enhanced mode TO-220/TO-263 MOSFETFeaturesTO-220 TO-263 BVDSS : 60V High ruggednessID : 100A Low RDS(ON) (Typ 10m)@VGS=4.5V(Typ 8.2m)@VGS=10VRDS(ON) : 10m@VGS=4.5V Low Gate Charge (Typ 48nC)8.2m@VGS=10V Improved dv/dt Capability 100% Avalanche Tested1 12 2 23 3 Application: Electronic Ballast, Motor ControlSync

SW085R06V7TN-channel Enhanced mode TO-220 MOSFETFeaturesTO-220BVDSS : 60V High ruggednessID : 80A Low RDS(ON) (Typ 10.5m)@VGS=4.5V(Typ 8.3m)@VGS=10VRDS(ON) : 10.5m@VGS=4.5V Low Gate Charge (Typ 66nC)8.3m@VGS=10V1 Improved dv/dt Capability 23 100% Avalanche Tested2 Application:Synchronous Rectification,1. Gate 2.Drain 3.Source

SW085R68E7TN-channel Enhanced mode TO-263/TO-220 MOSFETFeaturesTO-263 TO-220BVDSS : 68V High ruggednessID : 75A Low RDS(ON) (Typ 9.5m)@VGS=10VRDS(ON) : 9.5m Low Gate Charge (Typ 47nC) Improved dv/dt Capability 2 100% Avalanche Tested1 12 2 Application:Synchronous Rectification,3 31Li Battery Protect Board, Inverter1. Gate 2.Drain 3.S

SW085R06VT N-channel Enhanced mode TO-220 MOSFET Features TO-220 BVDSS : 60V High ruggedness ID : 50A Low RDS(ON) (Typ 8.0m)@VGS=4.5V (Typ 7.3m)@VGS=10V RDS(ON) : 8.0m @VGS=4.5V Low Gate Charge (Typ 87nC) 7.3m @VGS=10V Improved dv/dt Capability 1 100% Avalanche Tested 2 2 3 Application:Electronic Ballast , Motor Cont