SWP088R06VT Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SWP088R06VT

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 195 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 43 nS

Cossⓘ - Capacitancia de salida: 205 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm

Encapsulados: TO220

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SWP088R06VT datasheet

 ..1. Size:688K  samwin
 swp088r06vt swb088r06vt.pdf pdf_icon

SWP088R06VT

SW088R06VT N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 60V High ruggedness ID 100A Low RDS(ON) (Typ 10m )@VGS=4.5V (Typ 8.2m )@VGS=10V RDS(ON) 10m @VGS=4.5V Low Gate Charge (Typ 48nC) 8.2m @VGS=10V Improved dv/dt Capability 100% Avalanche Tested 1 1 2 2 2 3 3 Application Electronic Ballast, Motor Control Sync

 6.1. Size:742K  samwin
 swp088r08e8t swb088r08e8t.pdf pdf_icon

SWP088R06VT

SW088R08E8T N-channel Enhanced mode TO-220/TO-263 MOSFET Features TO-220 TO-263 BVDSS 80V High ruggedness ID 80A Low RDS(ON) (Typ 9.4m )@VGS=10V RDS(ON) 9.4m Low Gate Charge (Typ 89nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application Synchronous Rectification, 3 3 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3.S

 9.1. Size:813K  samwin
 swp085r06v7t.pdf pdf_icon

SWP088R06VT

SW085R06V7T N-channel Enhanced mode TO-220 MOSFET Features TO-220 BVDSS 60V High ruggedness ID 80A Low RDS(ON) (Typ 10.5m )@VGS=4.5V (Typ 8.3m )@VGS=10V RDS(ON) 10.5m @VGS=4.5V Low Gate Charge (Typ 66nC) 8.3m @VGS=10V 1 Improved dv/dt Capability 2 3 100% Avalanche Tested 2 Application Synchronous Rectification, 1. Gate 2.Drain 3.Source

 9.2. Size:755K  samwin
 swb085r68e7t swp085r68e7t.pdf pdf_icon

SWP088R06VT

SW085R68E7T N-channel Enhanced mode TO-263/TO-220 MOSFET Features TO-263 TO-220 BVDSS 68V High ruggedness ID 75A Low RDS(ON) (Typ 9.5m )@VGS=10V RDS(ON) 9.5m Low Gate Charge (Typ 47nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application Synchronous Rectification, 3 3 1 Li Battery Protect Board, Inverter 1. Gate 2.Drain 3.S

MOSTRAR MÁS

Otros transistores... SWP075R08E7T, SWP076R68E7T, SWP078R08E8T, SWP078R08ET, SWP085R06V7T, SWP085R06VT, SWP085R68E7T, SWP086R68E7T, K4145, SWP088R08E8T, SWP090R08ET, SWP100N10A, SWP100N10B, SWP100R10VT, SWP10N50K, SWP10N65D, SWP10N65K