SWT38N60K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SWT38N60K
   Código: SW38N60K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 357.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 38 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 96 nC
   trⓘ - Tiempo de subida: 64 nS
   Cossⓘ - Capacitancia de salida: 122 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.095 Ohm
   Paquete / Cubierta: TO247

Búsqueda de reemplazo de MOSFET SWT38N60K

SWT38N60K Datasheet (PDF)

..1. Size:604K samwin
swt38n60k.pdf

SW38N60K N-channel Enhanced mode TO-247 MOSFET Features BVDSS : 600V TO-247 ID : 38A High ruggedness Low RDS(ON) (Typ 0.084)@VGS=10V RDS(ON) :0.084 Low Gate Charge (Typ 96nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 1 3 Application:ChargerLEDUPSServicer 1. Gate 2. Drain 3. Source 3 General Description

7.1. Size:654K samwin
swt38n65k2.pdf

SW38N65K2 N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS : 650V Features ID : 38A High ruggedness RDS(ON) : 79m Low RDS(ON) (Typ 79m)@VGS=10V Low Gate Charge (Typ 71nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: Charger, LED , Servicer, UPS 1. Gate 2. Drain 3. Source 3 General Description This

7.2. Size:612K samwin
swt38n65k.pdf

SW38N65K N-channel Enhanced mode TO-247 MOSFET Features TO-247 BVDSS : 650V ID : 38A High ruggedness Low RDS(ON) (Typ 0.09)@VGS=10V RDS(ON) :0.09 Low Gate Charge (Typ 96nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 1 3 Application:ChargerLEDUPSServicer 1. Gate 2. Drain 3. Source 3 General Description

7.3. Size:860K samwin
swt38n65k2f swx38n65k2f.pdf

SW38N65K2F N-channel Enhanced mode TO-247/TO-220FB MOSFET Features TO-247 TO-220FB BVDSS : 650V ID : 38A High ruggedness Low RDS(ON) (Typ 83m)@VGS=10V RDS(ON) : 83m Low Gate Charge (Typ 71nC) Improved dv/dt Capability 2 1 1 100% Avalanche Tested 2 2 1 3 3 Application: Charge, LED , Servicer, UPS 1. Gate 2. Drain 3. Source Gener

7.4. Size:707K samwin
sw38n65kf swt38n65kf.pdf

SW38N65KF N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS : 650V Features ID : 38A High ruggedness RDS(ON) : 95m Low RDS(ON) (Typ 95m)@VGS=10V Low Gate Charge (Typ 99nC) 2 Improved dv/dt Capability 1 2 100% Avalanche Tested 3 Application:LED, UPS, Charge, Servicer 1 1. Gate 2. Drain 3. Source General Description 3 This p

7.5. Size:621K samwin
swt38n65kf.pdf

SW38N65KF N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS : 650V Features ID : 38A High ruggedness RDS(ON) : 95m Low RDS(ON) (Typ 95m)@VGS=10V Low Gate Charge (Typ 99nC) 2 Improved dv/dt Capability 1 2 100% Avalanche Tested 3 Application:LED, UPS, Charger, Servicer 1 1. Gate 2. Drain 3. Source General Description 3 This

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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