SWT47N70K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SWT47N70K
Código: SW47N70K
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 328.9 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 47 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 VQgⓘ - Carga de la puerta: 152 nC
trⓘ - Tiempo de subida: 99 nS
Cossⓘ - Capacitancia de salida: 185 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
Paquete / Cubierta: TO247
Búsqueda de reemplazo de MOSFET SWT47N70K
SWT47N70K Datasheet (PDF)
swt47n70k.pdf
SW47N70K N-channel Enhanced mode TO-247 MOSFET Features TO-247 BVDSS : 700V ID : 47A High ruggedness Low RDS(ON) (Typ 65m)@VGS=10V RDS(ON) :65m Low Gate Charge (Typ 152nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application:Charger,LED,PC Power 1 1. Gate 2. Drain 3. Source 3 General Description This power MO
sw47n65k2 swt47n65k2.pdf
SW47N65K2 N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS : 650V Features ID : 47A High ruggedness RDS(ON) : 56m Low RDS(ON) (Typ 56m)@VGS=10V Low Gate Charge (Typ 103nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: LED, UPS, Charge, Servicer 1. Gate 2. Drain 3. Source 3 General Description This p
swt47n60k.pdf
SW47N60K N-channel Enhanced mode TO-247 MOSFET Features BVDSS : 600V TO-247 ID : 47A High ruggedness Low RDS(ON) (Typ 56m)@VGS=10V RDS(ON) :56m Low Gate Charge (Typ 152nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application:Charger,LED,PC Power 1 1. Gate 2. Drain 3. Source 3 General Description This power MO
swt47n65k2.pdf
SW47N65K2 N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS : 650V Features ID : 47A High ruggedness RDS(ON) : 56m Low RDS(ON) (Typ 56m)@VGS=10V Low Gate Charge (Typ 103nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: LED, UPS, Charger, Servicer 1. Gate 2. Drain 3. Source 3 General Description This
swt47n65k2f.pdf
SW47N65K2F N-channel Enhanced mode TO-247 MOSFET Features TO-247 BVDSS : 650V ID : 47A High ruggedness Low RDS(ON) (Typ 59m)@VGS=10V RDS(ON) : 59m Low Gate Charge (Typ 102nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 1 3 Application: Charger, UPS , LED , Servicer 1. Gate 2. Drain 3. Source 3 General Description Th
swt47n65k.pdf
SW47N65K N-channel Enhanced mode TO-247 MOSFET Features BVDSS : 650V TO-247 ID : 47A High ruggedness Low RDS(ON) (Typ 60m)@VGS=10V RDS(ON) :60m Low Gate Charge (Typ 152nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application:Charger,LED,PC Power 1 1. Gate 2. Drain 3. Source 3 General Description This power MO
swt47n65kf.pdf
SW47N65KF N-channel Enhanced mode TO-247 MOSFET Features TO-247 BVDSS : 650V High ruggedness ID : 47A Low RDS(ON) (Typ 60m)@VGS=10V RDS(ON) : 60m Low Gate Charge (Typ 152nC) Extremely Low trr and Qrr 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 3 Application:LED, UPS, Charger, Servicer 1 1. Gate 2. Drain 3. Source
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