Справочник MOSFET. SWT47N70K

 

SWT47N70K MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SWT47N70K
   Маркировка: SW47N70K
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 328.9 W
   Предельно допустимое напряжение сток-исток |Uds|: 700 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Пороговое напряжение включения |Ugs(th)|: 5 V
   Максимально допустимый постоянный ток стока |Id|: 47 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 152 nC
   Время нарастания (tr): 99 ns
   Выходная емкость (Cd): 185 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.075 Ohm
   Тип корпуса: TO247

 Аналог (замена) для SWT47N70K

 

 

SWT47N70K Datasheet (PDF)

 ..1. Size:611K  samwin
swt47n70k.pdf

SWT47N70K
SWT47N70K

SW47N70K N-channel Enhanced mode TO-247 MOSFET Features TO-247 BVDSS : 700V ID : 47A High ruggedness Low RDS(ON) (Typ 65m)@VGS=10V RDS(ON) :65m Low Gate Charge (Typ 152nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application:Charger,LED,PC Power 1 1. Gate 2. Drain 3. Source 3 General Description This power MO

 8.1. Size:810K  samwin
sw47n65k2 swt47n65k2.pdf

SWT47N70K
SWT47N70K

SW47N65K2 N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS : 650V Features ID : 47A High ruggedness RDS(ON) : 56m Low RDS(ON) (Typ 56m)@VGS=10V Low Gate Charge (Typ 103nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: LED, UPS, Charge, Servicer 1. Gate 2. Drain 3. Source 3 General Description This p

 8.2. Size:582K  samwin
swt47n60k.pdf

SWT47N70K
SWT47N70K

SW47N60K N-channel Enhanced mode TO-247 MOSFET Features BVDSS : 600V TO-247 ID : 47A High ruggedness Low RDS(ON) (Typ 56m)@VGS=10V RDS(ON) :56m Low Gate Charge (Typ 152nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application:Charger,LED,PC Power 1 1. Gate 2. Drain 3. Source 3 General Description This power MO

 8.3. Size:748K  samwin
swt47n65k2.pdf

SWT47N70K
SWT47N70K

SW47N65K2 N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS : 650V Features ID : 47A High ruggedness RDS(ON) : 56m Low RDS(ON) (Typ 56m)@VGS=10V Low Gate Charge (Typ 103nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: LED, UPS, Charger, Servicer 1. Gate 2. Drain 3. Source 3 General Description This

 8.4. Size:739K  samwin
swt47n65k2f.pdf

SWT47N70K
SWT47N70K

SW47N65K2F N-channel Enhanced mode TO-247 MOSFET Features TO-247 BVDSS : 650V ID : 47A High ruggedness Low RDS(ON) (Typ 59m)@VGS=10V RDS(ON) : 59m Low Gate Charge (Typ 102nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 1 3 Application: Charger, UPS , LED , Servicer 1. Gate 2. Drain 3. Source 3 General Description Th

 8.5. Size:733K  samwin
swt47n65k.pdf

SWT47N70K
SWT47N70K

SW47N65K N-channel Enhanced mode TO-247 MOSFET Features BVDSS : 650V TO-247 ID : 47A High ruggedness Low RDS(ON) (Typ 60m)@VGS=10V RDS(ON) :60m Low Gate Charge (Typ 152nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application:Charger,LED,PC Power 1 1. Gate 2. Drain 3. Source 3 General Description This power MO

 8.6. Size:618K  samwin
swt47n65kf.pdf

SWT47N70K
SWT47N70K

SW47N65KF N-channel Enhanced mode TO-247 MOSFET Features TO-247 BVDSS : 650V High ruggedness ID : 47A Low RDS(ON) (Typ 60m)@VGS=10V RDS(ON) : 60m Low Gate Charge (Typ 152nC) Extremely Low trr and Qrr 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 3 Application:LED, UPS, Charger, Servicer 1 1. Gate 2. Drain 3. Source

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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