FDS86106 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FDS86106 datasheet

..1. Size:257K fairchild semi
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July 2011 FDS86106 N-Channel Power Trench MOSFET 100 V, 3.4 A, 105 m Features General Description Max rDS(on) = 105 m at VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 171 m at VGS = 6 V, ID = 2.7 A High performance trench technology for extremely low rDS(on) been optimized

..2. Size:327K onsemi
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

8.1. Size:250K fairchild semi
fds86140.pdf pdf_icon

March 2011 FDS86140 N-Channel PowerTrench MOSFET 100 V, 11.2 A, 9.8 m Features General Description Max rDS(on) = 9.8 m at VGS = 10 V, ID = 11.2 A This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 16 m at VGS = 6 V, ID = 9 A Semiconductor s advanced Power Trench process that has High performance trench technologh for extremely low rDS(on) been optimized f

8.2. Size:250K fairchild semi
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July 2011 FDS86141 N-Channel Power Trench MOSFET 100 V, 7 A, 23 m Features General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 36 m at VGS = 6 V, ID = 5.5 A been especially tailored to minimize the on-state resistance and High performance