Справочник MOSFET. FDS86106

 

FDS86106 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDS86106
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 3 nC
   trⓘ - Время нарастания: 2 ns
   Cossⓘ - Выходная емкость: 47 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.105 Ohm
   Тип корпуса: SO-8

 Аналог (замена) для FDS86106

 

 

FDS86106 Datasheet (PDF)

 ..1. Size:257K  fairchild semi
 fds86106.pdf

FDS86106 FDS86106

July 2011FDS86106N-Channel Power Trench MOSFET 100 V, 3.4 A, 105 mFeatures General Description Max rDS(on) = 105 m at VGS = 10 V, ID = 3.4 AThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 171 m at VGS = 6 V, ID = 2.7 A High performance trench technology for extremely low rDS(on) been optimized

 ..2. Size:327K  onsemi
 fds86106.pdf

FDS86106 FDS86106

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:250K  fairchild semi
 fds86140.pdf

FDS86106 FDS86106

March 2011FDS86140 N-Channel PowerTrench MOSFET 100 V, 11.2 A, 9.8 mFeatures General Description Max rDS(on) = 9.8 m at VGS = 10 V, ID = 11.2 AThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 16 m at VGS = 6 V, ID = 9 A Semiconductors advanced Power Trench process that has High performance trench technologh for extremely low rDS(on) been optimized f

 8.2. Size:250K  fairchild semi
 fds86141.pdf

FDS86106 FDS86106

July 2011FDS86141N-Channel Power Trench MOSFET 100 V, 7 A, 23 mFeatures General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 36 m at VGS = 6 V, ID = 5.5 Abeen especially tailored to minimize the on-state resistance and High performance

 8.3. Size:354K  onsemi
 fds86140.pdf

FDS86106 FDS86106

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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