S70N06R Todos los transistores

 

S70N06R MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: S70N06R

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 88 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 70 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 57 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 198 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0132 Ohm

Encapsulados: TO220

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S70N06R datasheet

 ..1. Size:2304K  cn si-tech
 s70n06r s70n06s s70n06rn s70n06rp.pdf pdf_icon

S70N06R

S70N06R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFET Features Applications VDS=70V,ID=57A DC Motor Control Rds(on)(typ)=11.5m @Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description D D G G G G G D D D

 8.1. Size:229K  fairchild semi
 rfg70n06 rfp70n06 rf1s70n06 rf1s70n06sm.pdf pdf_icon

S70N06R

RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Data Sheet February 2005 70A, 60V, 0.014 Ohm, N-Channel Power Features MOSFETs 70A, 60V These are N-Channel power MOSFETs manufactured using rDS(on) = 0.014 the MegaFET process. This process, which uses feature Temperature Compensated PSPICE Model sizes approaching those of LSI circuits, gives optimum utilization of silic

 8.2. Size:227K  fairchild semi
 rf1s70n06.pdf pdf_icon

S70N06R

RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Data Sheet February 2005 70A, 60V, 0.014 Ohm, N-Channel Power Features MOSFETs 70A, 60V These are N-Channel power MOSFETs manufactured using rDS(on) = 0.014 the MegaFET process. This process, which uses feature Temperature Compensated PSPICE Model sizes approaching those of LSI circuits, gives optimum utilization of silic

 8.3. Size:149K  semihow
 hrs70n06k.pdf pdf_icon

S70N06R

December 2014 BVDSS = 60 V RDS(on) typ HRS70N06K ID = 80 A 60V N-Channel Trench MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge 100 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 5.6 (Typ.) @VGS=10V 100% Avalanche Test

MOSTRAR MÁS

Otros transistores... S60N18S , S65N07M , S68N08RN , S68N08RP , S68N08ZR , S68N08ZS , S68N08ZRN , S68N08ZRP , IRFB7545 , S70N06RN , S70N06RP , S70N06S , S70N08ZR , S70N08ZS , S70N08ZRN , S70N08ZRP , S8045R .

History: AO3401MI-MS | SMF12N60 | IXFE48N50Q | FQA28N50 | WM03N86M2 | FDMC8882

 

 

 

 

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