All MOSFET. S70N06R Datasheet

 

S70N06R Datasheet and Replacement


   Type Designator: S70N06R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 88 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 57 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 198 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0132 Ohm
   Package: TO220
 

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S70N06R Datasheet (PDF)

 ..1. Size:2304K  cn si-tech
s70n06r s70n06s s70n06rn s70n06rp.pdf pdf_icon

S70N06R

S70N06R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFETFeatures Applications VDS=70V,ID=57A DC Motor Control Rds(on)(typ)=11.5m@Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description DDGG G GG D DD

 8.1. Size:229K  fairchild semi
rfg70n06 rfp70n06 rf1s70n06 rf1s70n06sm.pdf pdf_icon

S70N06R

RFG70N06, RFP70N06, RF1S70N06,RF1S70N06SMData Sheet February 200570A, 60V, 0.014 Ohm, N-Channel Power FeaturesMOSFETs 70A, 60VThese are N-Channel power MOSFETs manufactured using rDS(on) = 0.014the MegaFET process. This process, which uses feature Temperature Compensated PSPICE Modelsizes approaching those of LSI circuits, gives optimum utilization of silic

 8.2. Size:227K  fairchild semi
rf1s70n06.pdf pdf_icon

S70N06R

RFG70N06, RFP70N06, RF1S70N06,RF1S70N06SMData Sheet February 200570A, 60V, 0.014 Ohm, N-Channel Power FeaturesMOSFETs 70A, 60VThese are N-Channel power MOSFETs manufactured using rDS(on) = 0.014the MegaFET process. This process, which uses feature Temperature Compensated PSPICE Modelsizes approaching those of LSI circuits, gives optimum utilization of silic

 8.3. Size:149K  semihow
hrs70n06k.pdf pdf_icon

S70N06R

December 2014BVDSS = 60 VRDS(on) typ HRS70N06K ID = 80 A60V N-Channel Trench MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 100 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 5.6 (Typ.) @VGS=10V 100% Avalanche Test

Datasheet: S60N18S , S65N07M , S68N08RN , S68N08RP , S68N08ZR , S68N08ZS , S68N08ZRN , S68N08ZRP , 8N60 , S70N06RN , S70N06RP , S70N06S , S70N08ZR , S70N08ZS , S70N08ZRN , S70N08ZRP , S8045R .

History: CTLM8110-M832D | HSS2306A

Keywords - S70N06R MOSFET datasheet

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