S70N06R PDF and Equivalents Search

 

S70N06R Specs and Replacement

Type Designator: S70N06R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 88 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 57 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 198 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0132 Ohm

Package: TO220

S70N06R substitution

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S70N06R datasheet

 ..1. Size:2304K  cn si-tech
 s70n06r s70n06s s70n06rn s70n06rp.pdf pdf_icon

S70N06R

S70N06R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFET Features Applications VDS=70V,ID=57A DC Motor Control Rds(on)(typ)=11.5m @Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description D D G G G G G D D D ... See More ⇒

 8.1. Size:229K  fairchild semi
 rfg70n06 rfp70n06 rf1s70n06 rf1s70n06sm.pdf pdf_icon

S70N06R

RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Data Sheet February 2005 70A, 60V, 0.014 Ohm, N-Channel Power Features MOSFETs 70A, 60V These are N-Channel power MOSFETs manufactured using rDS(on) = 0.014 the MegaFET process. This process, which uses feature Temperature Compensated PSPICE Model sizes approaching those of LSI circuits, gives optimum utilization of silic... See More ⇒

 8.2. Size:227K  fairchild semi
 rf1s70n06.pdf pdf_icon

S70N06R

RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Data Sheet February 2005 70A, 60V, 0.014 Ohm, N-Channel Power Features MOSFETs 70A, 60V These are N-Channel power MOSFETs manufactured using rDS(on) = 0.014 the MegaFET process. This process, which uses feature Temperature Compensated PSPICE Model sizes approaching those of LSI circuits, gives optimum utilization of silic... See More ⇒

 8.3. Size:149K  semihow
 hrs70n06k.pdf pdf_icon

S70N06R

December 2014 BVDSS = 60 V RDS(on) typ HRS70N06K ID = 80 A 60V N-Channel Trench MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge 100 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 5.6 (Typ.) @VGS=10V 100% Avalanche Test... See More ⇒

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Detailed specifications: S60N18S, S65N07M, S68N08RN, S68N08RP, S68N08ZR, S68N08ZS, S68N08ZRN, S68N08ZRP, IRFB7545, S70N06RN, S70N06RP, S70N06S, S70N08ZR, S70N08ZS, S70N08ZRN, S70N08ZRP, S8045R

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