NCE65TF130T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE65TF130T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 260 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 28 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 120 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
Paquete / Cubierta: TO247
Búsqueda de reemplazo de NCE65TF130T MOSFET
NCE65TF130T Datasheet (PDF)
nce65tf130t.pdf

NCE65TF130T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 28 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power ap
nce65tf130t.pdf

NCE65TF130TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 120 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 28 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and industrial power applicati
nce65tf130d.pdf

NCE65TF130D,NCE65TF130,NCE65TF130FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 120 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 28 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and ind
nce65tf130.pdf

NCE65TF130D,NCE65TF130,NCE65TF130FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 120 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 28 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and ind
Otros transistores... S85N16RP , S85N16S , CRST037N10N , CRSS035N10N , DP3080 , HY3506P , HY3506B , LTP70N06P , IRF9540 , HG3P056N20S , HG3P095N25S , HGA025N06S , HGA028NE6AL , HGA040N06S , HGA040N06SL , HGA045NE4SL , HGA046NE6A .
History: SPN80T10 | IXFN73N30Q | NCE65N460I | AP85T03GJ-HF | BLM8205B | AO3494
History: SPN80T10 | IXFN73N30Q | NCE65N460I | AP85T03GJ-HF | BLM8205B | AO3494



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