NCE65TF130T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE65TF130T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 260 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 28 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm

Encapsulados: TO247

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NCE65TF130T datasheet

 ..1. Size:423K  1
 nce65tf130t.pdf pdf_icon

NCE65TF130T

NCE65TF130T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 28 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power ap

 ..2. Size:1334K  ncepower
 nce65tf130t.pdf pdf_icon

NCE65TF130T

NCE65TF130T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 120 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 28 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applicati

 4.1. Size:1828K  ncepower
 nce65tf130d.pdf pdf_icon

NCE65TF130T

NCE65TF130D,NCE65TF130,NCE65TF130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 120 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 28 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ind

 4.2. Size:1828K  ncepower
 nce65tf130.pdf pdf_icon

NCE65TF130T

NCE65TF130D,NCE65TF130,NCE65TF130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 120 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 28 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ind

MOSTRAR MÁS

Otros transistores... S85N16RP, S85N16S, CRST037N10N, CRSS035N10N, DP3080, HY3506P, HY3506B, LTP70N06P, 2N7000, HG3P056N20S, HG3P095N25S, HGA025N06S, HGA028NE6AL, HGA040N06S, HGA040N06SL, HGA045NE4SL, HGA046NE6A